2017
DOI: 10.11591/ijece.v7i4.pp2278-2286
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A 300 GHz CMOS Transmitter Front-End for Ultrahigh-Speed Wireless Communications

Abstract: This paper presents a 300 GHz transmitter front-end suitable for ultrahigh-speed wireless communications. The transmitter front-end realized in TSMC 40 nm CMOS consists of a common-source (CS) based doubler driven by a two-way D-band power amplifier (PA). Simulation results show that the two-way D-band PA obtains a peak gain of 21.6 dB over a -3 dB bandwidth from 132 GHz to 159 GHz. It exhibits a saturated power of 7.2 dBm and a power added efficiency (PAE) of 2.3%, all at 150 GHz. The CS based doubler results… Show more

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Cited by 3 publications
(3 citation statements)
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“…Here, P t is the transmitted power, c is the speed of light, G r and G t is the receiving and transmitting antenna gains, A is the propagation loss, R is the communication distance, and f is the communication frequency. The state-of-the-art Si FET emitters using frequency multiplication generate in the order of a hundred of microwatts power in the 300 GHz range [ 105 , 106 ]. However, the TeraFET output power could be increased using a series connection of TeraFETs [ 107 ] and even more by using the plasmonic crystal TeraFETs discussed in the next section with the estimated power output on the order ~100 mW [ 20 ].…”
Section: Plasmonic Terafetsmentioning
confidence: 99%
See 1 more Smart Citation
“…Here, P t is the transmitted power, c is the speed of light, G r and G t is the receiving and transmitting antenna gains, A is the propagation loss, R is the communication distance, and f is the communication frequency. The state-of-the-art Si FET emitters using frequency multiplication generate in the order of a hundred of microwatts power in the 300 GHz range [ 105 , 106 ]. However, the TeraFET output power could be increased using a series connection of TeraFETs [ 107 ] and even more by using the plasmonic crystal TeraFETs discussed in the next section with the estimated power output on the order ~100 mW [ 20 ].…”
Section: Plasmonic Terafetsmentioning
confidence: 99%
“…As mentioned above, the state-of-the-art Si FET emitters using frequency multiplication generate in the order of a hundred of microwatts power in the 300 GHz range [ 106 ]. However, the TeraFET output power could be increased using a series connection of TeraFETs [ 107 ] and even more by using the plasmonic crystal TeraFETs discussed above with the estimated power output on the order ~100 mW [ 20 ].…”
Section: Terafet Sourcesmentioning
confidence: 99%
“…Neither correspondences systems nor data innovation frameworks can handle high voltages, however hope to see additional low voltage signals. Information the changed low-voltage motions on a correspondence system to be prepared by information handling gear [8]- [10].…”
Section: Proposed Solutionmentioning
confidence: 99%