A 300-GHz Low-Noise Amplifier in 130-nm SiGe SG13G3 Technology

Gad‐Allah, A. G.; Eissa, Mohamed Hussein; Mausolf, Thomas; Kissinger, Dietmar; Malignaggi, Andrea

doi:10.1109/lmwc.2021.3128762

Cited by 15 publications

(9 citation statements)

References 11 publications

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“…The architecture in [23] is similar to the work in [26], and its gain-bandwidth improvement was due to the much larger DC-power consumption compared with our design. technologies for the recently reported sub-THz amplifiers were more advanced than our work except [24]. Compared with our work, the design in [24] achieved a 2 dB higher gain at the cost of the higher DC power consumption.…”

Section: Simulation and Measurement Resultsmentioning

confidence: 67%

“…The performance of the implemented amplifier is summarized compared with recent amplifiers in similar frequency bands in Table 1. As shown in the table, the applied SiGe technologies for the recently reported sub-THz amplifiers were more advanced than our work except [24]. Compared with our work, the design in [24] achieved a 2 dB higher gain at the cost of the higher DC power consumption.…”

Section: Simulation and Measurement Resultsmentioning

confidence: 68%

“…In addition, stronger drivers in the local oscillator (LO) chain are also necessary to improve the mixers' noise performance, conversion gain, and linearity. Recently, in the 300 GHz band, there have been noticeable efforts to develop silicon-based low-noise amplifiers (LNAs) or drivers [22][23][24][25][26][27]. By employing an inductive feedback network, each common source (CS) amplifying stage could boost its gain close to the maximum achievable gain available by the CMOS process.…”

Section: Introductionmentioning

confidence: 99%

“…A differential cascade structure with optimum impedance matching can maximize the gain of the amplifying stage at the cost of a relatively large area consumption and additional baluns required at the input and output. Using this strategy, a three-stage 300 GHz LNA with 10.8 dB gain and 68 GHz bandwidth has been presented in an advanced 130 nm SiGe technology with f T /f max of 470/700 GHz [24]. Other similar designs could be found in [25][26][27] where the reported performances were achieved with trade-offs between gain, bandwidth, and area occupancy.…”

Section: Introductionmentioning

confidence: 99%

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A 280 GHz 30 GHz Bandwidth Cascaded Amplifier Using Flexible Interstage Matching Strategy in 130 nm SiGe Technology

2022

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This paper presents a 280 GHz amplifier design strategy for a robust multistage amplifier in a sub-Terahertz (sub-THz) regime in 130 nm SiGe technology. The presented 280 GHz amplifier consists of 14 stages of the cascaded common emitter (CE) amplifier which offers a compact and improved-noise design due to the absence of the area-expensive and lossy baluns at such high frequencies. The interstage-matching network was flexibly constructed with two separate resonant tanks using metal–insulator–metal (MIM) capacitors and microstrip transmission lines (MSTLs) between each stage. The measured amplifier achieved a peak power gain of 10.9 dB at 283 GHz and a 3 dB gain of bandwidth of 30 GHz between 270 and 300 GHz. The peak output power of the amplifier was 0.8 dBm with an output of 1 dB gain compression point (OP1dB) of -3.6 dBm in simulation. The 14-stage amplifier consumes an area of 0.213 mm2, including all the pads. With the proposed interstage matching approach, a well-balanced 280 GHz amplifier has been demonstrated. The proposed design strategy is widely applicable to sub-THz receivers for future wireless communication systems.

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Section: Simulation and Measurement Resultsmentioning

confidence: 67%

Section: Simulation and Measurement Resultsmentioning

confidence: 68%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

A 280 GHz 30 GHz Bandwidth Cascaded Amplifier Using Flexible Interstage Matching Strategy in 130 nm SiGe Technology

2022

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“…However, the aforementioned work is done at frequencies much below the f max /2 mark. In [35] and [36], SiGe BiCMOS technology achieves speed ( f max ) of the transistor as high as 600 and 700 GHz, respectively. Due to their circuit operation below f max /2, the amplifier offers relatively improved performance compared to the other state-of-the-art.…”

mentioning

confidence: 99%

Design Aspects of Single-Ended and Differential SiGe Low-Noise Amplifiers Operating Above f_max/2in Sub-THz/THz Frequencies

Singh

Rahkonen

Leinonen

et al. 2023

IEEE J. Solid-State Circuits

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This article presents a single-stage single-ended (SE) and a multistage pseudo-differential cascode low-noise amplifiers (D-LNA) with their center frequencies at 235 and 290 GHz, respectively. Both low-noise amplifiers (LNAs) are designed beyond half of the maximum frequency of oscillation ( f max ) in 130-nm SiGe BiCMOS technology with f t / f max of 300/450 GHz. Implications of gain-boosting and noise reduction techniques in cascode structure are analyzed and it is observed that beyond f max /2, these techniques do not provide desired benefits. The single-stage SE LNA is designed to ascertain the theoretical analysis, and the same analysis is further implemented in staggered tuned four-stage LNA. Single-stage SE LNA provides a small signal gain of 7.8 dB at 235 GHz with 50 GHz of 3-dB bandwidth by consuming 18 mW of power. Four-stage differential LNA gives 12.9 dB of gain at center frequency 290 GHz and 11.2 dB at 300 GHz by drawing 68 mA current from the 2-V supply. The 3-dB bandwidth of differential LNA is measured to be 23 GHz. Noise figure measurements of both LNAs are performed using a gain-method technique with their measured noise figure values of 11 and 16 dB, respectively. This work successfully demonstrates the possibility of using a Si-based process to implement amplifiers beyond f max /2. To the authors' best knowledge, the four-stage differential LNA achieves, without any gain-boosting technique, the highest gain at 2/3( f max ) with decent noise figure performance in SiGe technology.Index Terms-High current model (HICUM), low-noise amplifiers (LNAs), maximum frequency of oscillation ( f max ), receivers, SiGe BiCMOS integrated circuits, sub-THz and THz integrated circuits, vertical bipolar intercompany model (VBIC). I. INTRODUCTION F UTURE high-speed wireless technologies are dependent on the sub-THz and THz band of electromagnetic spectrum [1], [2], [3], [4]. In this aspect, IEEE 802.15.3d-2017 proposes the use of a sub-THz frequency range for point-to-point communication for data rates up to 100 Gb/s [5]. RF frontend design in the WR3.4 waveguide band (220-330 GHz) is very promising for future high-speed communication [6]. It has Manuscript

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Terahertz Wireless Communication Systems

Nissanov

Singh

2023

Antenna Technology for Terahertz Wireless Communication

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A 300-GHz Low-Noise Amplifier in 130-nm SiGe SG13G3 Technology

Cited by 15 publications

References 11 publications

A 280 GHz 30 GHz Bandwidth Cascaded Amplifier Using Flexible Interstage Matching Strategy in 130 nm SiGe Technology

A 280 GHz 30 GHz Bandwidth Cascaded Amplifier Using Flexible Interstage Matching Strategy in 130 nm SiGe Technology

Design Aspects of Single-Ended and Differential SiGe Low-Noise Amplifiers Operating Above f_max/2in Sub-THz/THz Frequencies

Terahertz Wireless Communication Systems

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A 300-GHz Low-Noise Amplifier in 130-nm SiGe SG13G3 Technology

Cited by 15 publications

References 11 publications

A 280 GHz 30 GHz Bandwidth Cascaded Amplifier Using Flexible Interstage Matching Strategy in 130 nm SiGe Technology

A 280 GHz 30 GHz Bandwidth Cascaded Amplifier Using Flexible Interstage Matching Strategy in 130 nm SiGe Technology

Design Aspects of Single-Ended and Differential SiGe Low-Noise Amplifiers Operating Above fmax/2in Sub-THz/THz Frequencies

Terahertz Wireless Communication Systems

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Design Aspects of Single-Ended and Differential SiGe Low-Noise Amplifiers Operating Above f_max/2in Sub-THz/THz Frequencies