International Technical Digest on Electron Devices Meeting 1992
DOI: 10.1109/iedm.1992.307452
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A 32*32 two-dimensional photodetector array using a-Si pin photodiodes and poly-Si TFTs integrated on a transparent substrate

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Cited by 3 publications
(1 citation statement)
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“…Cover glass above the panel is used to support and protect the panel. The sensor, known as PIN, consists of a p-type and n-type silicon, sandwiching a layer of amorphous silicon as the photosensitive material, converting light into electrons [22]. TFT circuits, used as pixel driving scheme for sensors, were fabricated by the low-temperature polycrystalline silicon (LTPS) process.…”
Section: Device and Optical Methodsmentioning
confidence: 99%
“…Cover glass above the panel is used to support and protect the panel. The sensor, known as PIN, consists of a p-type and n-type silicon, sandwiching a layer of amorphous silicon as the photosensitive material, converting light into electrons [22]. TFT circuits, used as pixel driving scheme for sensors, were fabricated by the low-temperature polycrystalline silicon (LTPS) process.…”
Section: Device and Optical Methodsmentioning
confidence: 99%