A 33% tuning range high output power V-band superharmonic coupled quadrature VCO in SiGe technology

Nasr, I.; Dudek, Manuel; Weigel, Robert; Kissinger, Dietmar

doi:10.1109/rfic.2012.6242286

Cited by 22 publications

(11 citation statements)

References 11 publications

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“…The proposed VCO consumes 5.8 mW excluding the buffer from a 1.0 V power supply. To compare with other VCO designs, a widely used figure-of-merit (FoM) benchmark is expressed in (9) where L (Δf offset ) is the phase noise at f offset offset frequency, f o is the centre frequency of the VCO, and P DC is the power dissipation of the VCO.…”

Section: Resultsmentioning

confidence: 99%

“…Hence, V-band technologies can provide higher throughput than 802.11ac technology. In general, millimetre-wave integrated circuits are implemented in III-V compound semiconductors such as GaAs [2,3], GaN [4][5][6], and silicon germanium (SiGe) [7][8][9] technologies. In paper [2,[4][5][6], the transistors are implemented as high-electron-mobility transistor (HEMT) in III-V compound processes.…”

Section: Introductionmentioning

confidence: 99%

“…These technologies are not able to be integrated with CMOS baseband (BB) circuits and the manufacturing cost is also high. In paper [7][8][9], the transistors are implemented as bipolar junction transistor (BJT) in SiGe process. The performances of SiGe BJTs are good for millimetre-wave applications.…”

Section: Introductionmentioning

confidence: 99%

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Low‐power CMOS voltage‐controlled oscillator with voltage‐controlled inductor for V‐band wireless personal area network communication systems

Huang

Chen

Hung

2015

IET Microwaves, Antennas & Propagation

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A low‐power voltage‐controlled oscillator (VCO) with voltage‐controlled inductor for V‐band wireless personal area network communication systems is presented in this study. The proposed VCO with a voltage‐controlled inductor provides a centre frequency of 45.62 GHz and was implemented in a 90 nm RF‐CMOS process. A tuning range of 1.28 GHz (44.98–46.26 GHz) with maximum control voltage of 1.0 V can be achieved. The phase noise is −92.8 dBc/Hz at 1 MHz offset frequency. The VCO core consumes 5.8 mW through a 1.0 V supply voltage and the active area is 0.13 mm2. The calculated figure‐of‐merit is −178.3.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Low‐power CMOS voltage‐controlled oscillator with voltage‐controlled inductor for V‐band wireless personal area network communication systems

Huang

Chen

Hung

2015

IET Microwaves, Antennas & Propagation

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“…Design of broadband receiver front-ends for the individual measurement and reference channel. The first two issues can be addressed in state-of-the-art silicon BiCMOS technologies by using wide-tuning range VCOs [6] in combination with SSB mixing or VCO bank implementations, as well as broadband directional coupler design [7]. The latter however is difficult to achieve for direct-conversion IQ architectures and favors heterodyne implementations.…”

Section: A Scattering Matrix and Calibrationmentioning

confidence: 99%

Integrated test concepts for in-situ millimeter-wave device characterization

Kissinger

Nehring

Oborovski

et al. 2015

2015 IEEE 13th International New Circuits and Systems Conference (NEWCAS)

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This paper presents our recent work towards stateof-the-art integrated test concepts for the in-situ characterization of silicon-integrated millimeter-wave devices and transceiver components for radar and communication applications. Narrowband as well as ultra-broadband integrated network analysis solutions for a variety of frequency bands ranging from 50 to 120 GHz are outlined. In this context, direct-conversion and heterodyne architectures and their respective implementations in silicon-germanium technologies are discussed.

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“…10, a schematic of the proposed quadrature VCO is shown, where two identical VCO cores (same as the VCO described above, but at different operating frequency) are mutually injection locked by a novel coupling mechanism [16]. The proposed technique uses two cross-coupled transistors and connected between the common base connections of the cascode buffer stage of each VCO core (corresponding to nodes X and Y).…”

Section: A Super-harmonically Coupled Vcomentioning

confidence: 99%

A 70–90-GHz High-Linearity Multi-Band Quadrature Receiver in ${\hbox{0.35-}}\mu{\hbox {m}}$ SiGe Technology

Nasr

Laemmle

Aufinger

et al. 2013

IEEE Trans. Microwave Theory Techn.

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An integrated frequency agile quadrature -band receiver is presented in this paper. The complete receiver is realized in a commercial m SiGe:C technology with an of 170/250 GHz. The receiver covers the two point-to-point communication bands from 71 to 76 GHz and from 81 to 86 GHz and the automotive radar band at 77 GHz. A wide tuning range modified Colpitts oscillator provides a local oscillator (LO) tuning range 30 . A two-stage constant phase RC polyphase network is implemented to provide wideband in-phase quadrature LO signals. The measured phase imbalance of the network stays below 8 over the receiver's frequency range. In addition the chip includes a wideband low-noise amplifier, Wilkinson power divider, down conversion mixers, and frequency prescaler. Each of the chip's receiver I/Q paths shows a measured conversion gain above 19 dB and an input referred 1-dB compression point of 22 dBm. The receiver's measured noise figure stays below 11 dB over the complete frequency range. Furthermore, the receiver has a measured IF bandwidth of 6 GHz. The complete chip including prescaler draws a current of 230 mA from a 3.3-V supply, and consumes a chip area of 1628 m 1528 m.Index Terms--band, low-noise amplifier (LNA), polyphase, quadrature generation, voltage-controlled oscillator (VCO), wideband receiver.

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A 33% tuning range high output power V-band superharmonic coupled quadrature VCO in SiGe technology

Cited by 22 publications

References 11 publications

Low‐power CMOS voltage‐controlled oscillator with voltage‐controlled inductor for V‐band wireless personal area network communication systems

Low‐power CMOS voltage‐controlled oscillator with voltage‐controlled inductor for V‐band wireless personal area network communication systems

Integrated test concepts for in-situ millimeter-wave device characterization

A 70–90-GHz High-Linearity Multi-Band Quadrature Receiver in ${\hbox{0.35-}}\mu{\hbox {m}}$ SiGe Technology

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