A 36.1 GHz Single Stage Low Noise Amplifier Using 0.13 &amp;#x0B5;m CMOS Process

Rashid, S. M. Shahriar; Ali, Sheikh Nijam; Roy, Apratim; Rashid, A. B. M. H.

doi:10.1109/csie.2009.86

Cited by 6 publications

(6 citation statements)

References 9 publications

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“…On the other hand, coastal areas containing sandy and muddy materials tend to run a higher risk of tsunami. Different mitigation treatments must be administered to the two different regions, such as by planting mangroves to take the brunt of tsunami crashing in (Rashid, M;Vetha, Roy D;Chandrasekhar, 2010). It is also of importance to plan rural land use to minimize coastal hazards (eg tsunami impacts).…”

Section: Literature Reviewmentioning

confidence: 99%

Educational Institution on Responding Disasters in Palu of Indonesia

Wekke¹,

Rajindra²,

Pushpalal³

et al. 2019

Preprint

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The earthquakes that occur in the Indonesia are caused by several primary factors such as the tectonic plate shifts which lead to the increased activity of earthquakes and volcanoes. Moreover, the geological condition and the rock structure of swathes of Indonesia constitute the secondary factor that contributes to the danger of the disaster in Indonesia. Various disasters having occurred in the last 2 years are summarized in this article. This study was aimed to provide information concerning the history as well as attempts to cope with disasters and impacts on society following the disasters in Indonesia. The qualitative case study methodology was selected along with sources derived from various community groups as well as governmental agencies such as BNPB (The National Agency for Disaster Countermeasure) and BMKG (Meteorological, Climatological, and Geophysical Agency) that serve as a reference in this study. The results of the study delineated that the community’s response to the natural disasters led to increased security mitigation efforts made by the community and the government. In addition, it affected social relationship between communities in a positive manner evidenced by participation in helping with the post-disaster recovery.

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Section: Literature Reviewmentioning

confidence: 99%

Educational Institution on Responding Disasters in Palu of Indonesia

Wekke¹,

Rajindra²,

Pushpalal³

et al. 2019

Preprint

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“…If C 1 and C 2 are set in the F (fermi-farad) range with L having a value of 1.1329 nH, then Z 1 is matched to core amplifier output impedance and the load sees the impedance Z 2 as a value close to 50 Ω. In this way, a resistance mirror at the output (laod) port extends the matching mechanism to K or K band frequencies [14]. Because of the absence of active buffer stages in the output linking circuit, the noise contribution of the amplifier observes significant savings.…”

Section: Proposed Architecturementioning

confidence: 99%

“…To introduce wideband characteristics to this component, designers are always looking for raising the operating bandwidth of a receiver front-end and reducing its overall power requirements [8]. In this regard, K and K band frequencies (12)(13)(14)(15)(16)(17)(18)(19)(20)(21)(22)(23)(24)(25)(26)(27) are deemed suitable for a microwave low noise amplifier for reliable high-speed short-distance transmission.…”

Section: Introductionmentioning

confidence: 99%

A power efficient bandwidth regulation technique for a low-noise high-gain RF wideband amplifier

Roy

Rashid

2012

Open Engineering

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In this paper, a single-stage deep sub-micron wideband amplifier (LNA) using a reactive resonance tank and passive port-matching techniques is demonstrated operating in the microwave frequency range (K band). A novel power-efficient bandwidth (BW) regulation technique is proposed by incorporating a small impedance in the resonance tank of the amplifier configuration. It manifests a forward gain in the range of 5.9-10.7 dB covering a message bandwidth of 10.6-6.3 GHz. With regulation, input-output reflection parameters (S 11 , S 22 ) and noise figure can be manipulated by -12.7 dB, -22.7 dB and 0.36 dB, respectively. Symmetric regulation is achieved for bandwidth and small signal gain with respect to moderate tank impedance (36.5% and -26.8%, respectively) but the effect on noise contribution remains relatively low (increase of 7% from a base value of 2.39 dB). The regulated architecture, when analyzed with 90 nm silicon CMOS process, supports low power (9.1 mW) on-chip communication. The circuit is tested with a number of combinations for tank (drain) impedance to verify the efficiency of the proposed technique and achieves better figures of merit when compared with published literature.

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“…and T 22 in the right-half amplifier circuit.For the output matching circuit connected at the amplifier's left load port (RF out.1 ), a design equation can be formulated for the matching components as[19] …”

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confidence: 99%

A passive-matched 22 GHz 2.6-dB-NF CMOS front-end with a 70-800 ps delay block

Roy

2013

J. Microw. Optoelectron. Electromagn. Appl.

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This paper presents a power-efficient RF differential receiver front-end supporting transmitted-reference (TR) communication in a 90 nm CMOS technology. Particularly, it addresses the issues of designing the frontend amplifier with lownoise and passive matching circuits on a silicon process and integrating a low-power delay unit in the front-end with wideband characteristics. The proposed architecture includes a differential high simulated gain (11 dB) amplifier which is centered at 21.6 GHz (in the K-Band) with a 6.2 GHz bandwidth (18.1~24.3 GHz). The input and output reflection parameters have centered values around-26 and-18 dB, respectively. With noise matching, the amplifier achieves 2.6~2.9 dB bandwidth noise-figure and 2 dBm input power limit for linear coverage. To interface the amplifier with a following RF mixer, a submicron delay-block (DB) is proposed with provision of adjusting number of stages in the delay chain. The branched DB architecture achieves monotonic delays covering a range of 70-800 ps (including group-dispersion). Tweaking of delay is possible through four design parameters and the setup is analyzed by extending the number of cascaded stages up to eight. Driven from a 1.2 V supply, the amplifier and the DB consume 13.9 and 8.52-10.61 mW power, respectively, and realize the circuits for the TR front-end. When compared with simulated results of reported CMOS receivers, the proposed design delivers higher performance in terms of a microwave figure-of-merit.

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A 36.1 GHz Single Stage Low Noise Amplifier Using 0.13 µm CMOS Process

Cited by 6 publications

References 9 publications

Educational Institution on Responding Disasters in Palu of Indonesia

Educational Institution on Responding Disasters in Palu of Indonesia

A power efficient bandwidth regulation technique for a low-noise high-gain RF wideband amplifier

A passive-matched 22 GHz 2.6-dB-NF CMOS front-end with a 70-800 ps delay block

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