2022
DOI: 10.1016/j.chaos.2022.111992
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A 3D memristive chaotic system with conditional symmetry

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Cited by 49 publications
(9 citation statements)
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References 29 publications
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“…64,65 The back emf (V p ) and the corresponding non-zero-crossing I-V characteristic indicate the pres- ence of an inherent nanobattery effect, 70,71 originating from the capacitive behaviour in these ATA NL samples, owing to the inhomogeneous charge carrier distribution within the alternate Al 2 O 3 /TiO 2 sublayers. 72 With the increase in T d from 150 to 300 °C, a gradual increment in V p from 100 mV to 700 mV, as depicted in the inset of Fig. 8a, indicates an increment in the capacitance of the NL structures and indirectly supports the steady improvement in the M-W interfacial polarization mechanism across the Al 2 O 3 / TiO 2 (insulating/semiconducting) interfaces.…”
Section: Current-voltage Characteristics Of Ata Nlsmentioning
confidence: 68%
See 1 more Smart Citation
“…64,65 The back emf (V p ) and the corresponding non-zero-crossing I-V characteristic indicate the pres- ence of an inherent nanobattery effect, 70,71 originating from the capacitive behaviour in these ATA NL samples, owing to the inhomogeneous charge carrier distribution within the alternate Al 2 O 3 /TiO 2 sublayers. 72 With the increase in T d from 150 to 300 °C, a gradual increment in V p from 100 mV to 700 mV, as depicted in the inset of Fig. 8a, indicates an increment in the capacitance of the NL structures and indirectly supports the steady improvement in the M-W interfacial polarization mechanism across the Al 2 O 3 / TiO 2 (insulating/semiconducting) interfaces.…”
Section: Current-voltage Characteristics Of Ata Nlsmentioning
confidence: 68%
“…64,65 The back emf ( V p ) and the corresponding non-zero-crossing I – V characteristic indicate the presence of an inherent nanobattery effect, 70,71 originating from the capacitive behaviour in these ATA NL samples, owing to the inhomogeneous charge carrier distribution within the alternate Al 2 O 3 /TiO 2 sublayers. 72…”
Section: Resultsmentioning
confidence: 99%
“…From this view, when the offset boosting is completed by an absolute-value function, corresponding attractors can be doubled by the combination of polarity compensation. The mechanism is as explained in [63][64][65].…”
Section: Offset Boosting For Symmetric Pairs Of Strange Attractorsmentioning
confidence: 99%
“…At the same time, in the process of parameter mediation, it is found that it has many different types of chaotic attractors, which has been relatively rare in the past. In addition, the system also has a variety of complex dynamic phenomena, including a multi-wing chaotic attractor [31][32][33], symmetric chaotic attractor [34][35][36], chaotic degradation, coexisting attractor and so on. Offset boosting [37][38][39] is also a feature of the system, which means that the system can be controlled flexibly through the introduction of feedback states.…”
Section: Mathematical Modelmentioning
confidence: 99%