A 4.4mW Inductorless 2–20 GHz Single-Ended to Differential Frequency Doubler in 45 nm RFSOI CMOS Technology

Meyer, A.; Leyrer, Michael; Ziegler, Ch.; Maier, Martin E.; Lammert, Vincent; Issakov, Vadim

doi:10.1109/rfic54547.2023.10186178

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A 4.4mW Inductorless 2–20 GHz Single-Ended to Differential Frequency Doubler in 45 nm RFSOI CMOS Technology

Cited by 4 publications

References 11 publications

A Two-Way Current-Combining W-Band Power Amplifier Achieving 14.3-dBm Output Power with 13.4% PAE in 40-nm Bulk: IEEE ICMMT 2024

A Two-Way Current-Combining W-Band Power Amplifier Achieving 14.3-dBm Output Power with 13.4% PAE in 40-nm Bulk: IEEE ICMMT 2024

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