A 40 GHz power amplifier using a low cost high volume 0.15 um optical lithography pHEMT process

Abstract

A 40 GHz power amplifier is realized with a new 0.15 um optical lithography pHEMT process developed for lowcost microwave and millimeter wave circuits. Several Ka and V Band market requirements have driven demand for higher bandwidth, low-cost, integrated circuits. A 40 GHz power amplifier is used to demonstrate the process capabilities, starting from the initial design phase and culminating with the fabrication and measurement of the solid state power amplifier.Index Terms -Microstrip components, millimeter wave power amplifier, pHEMT, impedance matching.