A 40-nm CMOS permittivity sensor for chemical/biological material characterization at RF/microwave frequencies

Vlachogiannakis, Gerasimos; Spirito, M.; Pertijs, Michiel A. P.; Vreede, L.C.N. de

doi:10.1109/mwsym.2016.7540260

Cited by 5 publications

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“…Moreover, the noise sources that contribute to the system resolution limit are identified and their contribution is quantified. Additional measurement data are complementing the preliminary results reported in [25] that demonstrated the ability to measure material complex permittivity. Independent measurements with the sensing pixel loaded by a probe that offers a known termination are used to validate the bridge transfer characteristic, while statistical data of material measurements have been collected to evaluate the permittivity resolution of the sensor when fundamental, third and fifth harmonic are measured.…”

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confidence: 67%

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A 40-nm CMOS Complex Permittivity Sensing Pixel for Material Characterization at Microwave Frequencies

Vlachogiannakis

Pertijs

Spirito

et al. 2018

IEEE Trans. Microwave Theory Techn.

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Abstract-A compact sensing pixel for the determination of the localized complex permittivity at microwave frequencies is proposed. Implemented in 40-nm CMOS, the architecture comprises a square patch, interfaced to the material-under-test (MUT) sample, that provides permittivity-dependent admittance. The patch admittance is read out by embedding the patch in a double-balanced, RF-driven Wheatstone bridge. The bridge is cascaded by a linear, low-IF switching downconversion mixer, and is driven by a square wave that allows simultaneous characterization of multiple harmonics, thus increasing measurement speed and extending the frequency range of operation. In order to allow complex permittivity measurement, a calibration procedure has been developed for the sensor. Measurement results of liquids show good agreement with theoretical values and the measured relative permittivity resolution is better than 0.3 over a 0.1-10 GHz range. The proposed implementation features a measurement speed of 1 ms and occupies an active area of 0.15×0.3 mm 2 , allowing for future compact arrays of multiple sensors that facilitate 2-D dielectric imaging based on permittivity contrast.

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confidence: 67%

“…The proposed sensor, briefly presented in [25], features a single-ended patch sensing element, embedded in a fully-differential double-balanced RF-driven impedance bridge. A multi-harmonic measurement scheme is employed to extend the frequency range and increase the effective measurement speed.…”

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confidence: 99%