A 44-GHz-high IP3 InP HBT MMIC amplifier for low DC power millimeter-wave receiver applications

Miller Theorem for Weakly Nonlinear Feedback Circuits and Application to CE Amplifier

“…Indeed, even if sometimes high-frequency nonlinearity evaluation was carried out neglecting the base-collector capacitance nonlinearity contribution [7], it has been observed that this simplification is not generally acceptable [8], [9], [17]- [19]. On the other hand, assuming the base-emitter diode to be forward biased, we can neglect the base-emitter junction nonlinearities with respect to the diffusion capacitances contribution.…”

An InP/InGaAs/InP DHBT with high power density at Ka-band

“…InP/InGaAs/InP double heterojunction bipolar transistors (DHBTs) have been employed in power amplifiers in high-frequency communications and radars, especially in the Ka-band applications including local multipoint distribution services, very small aperture terminals, and 4G mobile network systems [1][2][3]. Since InP DHBTs have a lower turn-on voltage, better thermal characteristics and higher electron mobility than GaAs HBTs, recent investigations have focused on the technological aspects of InP/InGaAs DHBT devices, with demonstrated f T and f MAX of over 450 GHz using a collector of thickness 120 nm [4,5].…”

Influence of collector design on InGaP/GaAs HBT linearity

“…respectively. The general improvement in IP3 for increasing V c~ is attributed to the fact that CBC becomes less nonlinear as the basecollector junction is reverse biased as observed in Figure 1 [3,5,6,7]. Figure 3b clearly shows that IP3 reaches a plateau when VC, is biased beyond V, at Jc=0.6mA/pnz.…”

“…Tailwing the collector profile to reduce distortion from C B~ has been of particular interest because measurements have shown improvements in linearity when the collector is biased into full depletion [3,6,7]. These studies have primarily focused on the voltage dependence of CBC, and have suggested collector designs with low collector punchthrough voltages (V,& An extensive simulation study for Si BJT's has also suggested optimizing the collector profile to improve linearity [SI.…”

“…Intermodulation performance has been generally shown to be excellent. Several issues affecting the nonlinearity of HBT's include the partial cancellation of intrinsic non-linear currents [ 1, 2,3], the feedback effect due to the base and emitter resistances [4], and the nonlinearity of the base-collector capacitance (C~~) [3,4,5,6,7].…”