A 440–540-GHz Transmitter in 130-nm SiGe BiCMOS

Guner, Alper; Mausolf, Thomas; Wessel, Jan; Kissinger, Dietmar; Schmalz, K.

doi:10.1109/lmwc.2021.3060820

Cited by 13 publications

(15 citation statements)

References 11 publications

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“…The split power signal is connected to both branches through a power amplifier (measured gain is 19 dB at 120 GHz) to a 240 GHz frequency doubler with single-ended output, [30]. For the upper branch, the frequency of the single ended signal is doubled, [27]. First, the signal of the 240 GHz frequency doubler is transformed into a differential one by a Marchand balun and amplified with a 2-stage differential cascode amplifier.…”

Section: A Transmitter For Two Frequency Bandsmentioning

confidence: 99%

“…3 presents the photograph of the test-chip, which allowed to measure on-wafer the output power of the upper TX-branch by using an external LO at the input of the 120 GHz power amplifier. Here, a Marchand balun (see [27]) combines the two single-ended outputs of the frequency doublers having opposite phases. The area of this test-chip is 1.2 × 0.65 mm 2 .…”

Section: A Transmitter For Two Frequency Bandsmentioning

confidence: 99%

“…To extend the frequency range of our gas spectroscopy system, we developed TX-and RX-subcircuits for the frequency band around 480 GHz. A 4-way combined frequency multiplier chain in 0.13μm SiGe BiCMOS was presented, which converts a single ended 110-135 GHz input signal to a differential 440-540 GHz output signal [27]. It uses four identical multiplier chains with two frequency doubling stages.…”

Section: Introductionmentioning

confidence: 99%

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Transmitter and Receiver in 0.13 μm SiGe for Gas Spectroscopy at 222–270/444–540 GHz

et al. 2022

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This paper presents a transmitter (TX) and a receiver (RX) with a cross-polarized bowtieantenna on a silicon lens for gas spectroscopy at 222-270 GHz and the doubled frequency at 444-540 GHz. TX and RX are fabricated in 0.13 μm SiGe BiCMOS technology. Both use two integrated local oscillators for frequency subbands 222-256 GHz and 250-270 GHz, which allow operating in one branch of the TX and RX at 222-270 GHz and in a second branch of the TX and RX at 444-540 GHz by frequency doubling. The directivity of the cross-polarized bowtie-antenna of the TX and RX is optimized for these two frequency bands with an estimated value of 24.4 dBi at 260 GHz, and 29.5 dBi at 520 GHz. Absorption spectroscopy of gaseous methanol is used as a measure for the performance of the TX and RX in the lower and upper frequency bands.

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Section: A Transmitter For Two Frequency Bandsmentioning

confidence: 99%

Section: A Transmitter For Two Frequency Bandsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Transmitter and Receiver in 0.13 μm SiGe for Gas Spectroscopy at 222–270/444–540 GHz

et al. 2022

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“…A more efficient but narrowband approach is the direct combination of a subharmonic oscillator with a doubler or push-push operation [109]. Obtaining more output power is either achieved by a parallel combination of multipliers [176] or free-space power combination of multiple radiating elements [177]. However, such approaches require significant silicon die area.…”

Section: A Thz Performancementioning

confidence: 99%

“…Beyond 100-GHz, the saturating f t / f max values of scaled CMOS make competitive designs challenging compared to SiGe. Standard approaches to increase the output power rely on massive radiator arrays [204]- [206] or a multitude of parallel frequency multipliers [207] but are limited to below 0 dBm radiated power, a value that can easily be achieved with a two-way SiGe frequency multiplier at much higher bandwidth [176]. Despite these deficits, a number of complex CMOS transceivers for IEEE 802.15.3d THz short-range data communication have been presented [208]- [210].…”

Section: Thz Cmosmentioning

confidence: 99%

Millimeter-Wave and Terahertz Transceivers in SiGe BiCMOS Technologies

Kissinger

Kahmen

Weigel

2021

IEEE Trans. Microwave Theory Techn.

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This invited paper reviews the progress of silicon-germanium (SiGe) bipolar-complementary metal-oxidesemiconductor (BiCMOS) technology-based integrated circuits (ICs) during the last two decades. Focus is set on various transceiver (TRX) realizations in the millimeter-wave range from 60 GHz and at terahertz (THz) frequencies above 300 GHz. This article discusses the development of SiGe technologies and ICs with the latter focusing on the commercially most important applications of radar and beyond 5G wireless communications. A variety of examples ranging from 77-GHz automotive radar to THz sensing as well as the beginnings of 60-GHz wireless communication up to THz chipsets for 100-Gb/s data transmission are recapitulated. This article closes with an outlook on emerging fields of research for future advancement of SiGe TRX performance.

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A compact and fully integrated FMCW radar transceiver combined with a dielectric lens

Starke,

Bott,

Vogelsang

et al. 2023

Int. J. Microw. Wireless Technol.

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Electronic measurement systems in the THz frequency range are often bulky and expensive devices. While some compact single-chip systems operating in the high millimeter-wave frequency range have recently been published, compact measurement systems in the low THz frequency range are still rare. The emergence of new silicon-germanium (SiGe) semiconductor technologies allow the integration of system components, like oscillators, frequency multipliers, frequency dividers, and antennas, operating in the low THz frequency range, into a compact monolithic microwave integrated circuits (MMIC), which contains most components to implement a low-cost and compact frequency-modulated continuous-wave-radar transceiver. This article presents a single transceiver solution containing all necessary components. It introduces a $0.48\,\mathrm{THz}$ radar transceiver MMIC with a tuning range of $43\,\mathrm{GHz}$ and an output power of up to $-9.4\,\mathrm{dBm}$ in the SG13G3 $130\,\mathrm{nm}$ SiGe technology by IHP. The MMIC is complemented by a dielectric lens antenna design consisting of polytetrafluoroethylene, providing up to $39.3\,\mathrm d\mathrm B\mathrm i$ of directivity and half-power beam widths of 0.95∘ in transmit and receive direction. The suppression of clutter from unwanted targets deviating from antenna boresight more than 6∘ is higher than $24.6\,\mathrm d \mathrm B$ in E- and H-Plane.

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A 440–540-GHz Transmitter in 130-nm SiGe BiCMOS

Cited by 13 publications

References 11 publications

Transmitter and Receiver in 0.13 μm SiGe for Gas Spectroscopy at 222–270/444–540 GHz

Transmitter and Receiver in 0.13 μm SiGe for Gas Spectroscopy at 222–270/444–540 GHz

Millimeter-Wave and Terahertz Transceivers in SiGe BiCMOS Technologies

A compact and fully integrated FMCW radar transceiver combined with a dielectric lens

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