A 4H-SiC p–i–n Diode Fabricated by a Combination of Sublimation Epitaxy and CVD

Богданова, Е. В.

doi:10.1134/1.1944867

Semiconductors

2005

DOI: 10.1134/1.1944867

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A 4H-SiC p–i–n Diode Fabricated by a Combination of Sublimation Epitaxy and CVD

Е. В. Богданова

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2006

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Photoemission of 4H-SiC pin-Diodes Epitaxied by the Sublimation Method

Camara

Zekentes

Bano³

et al. 2006

MSF

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4H-SiC pin diodes were fabricated on epitaxial layers grown by Sandwich Sublimation Method (SSM). I-V and photoemission measurements were conducted on these devices. These measurements show hot spots responsible for a soft breakdown and evidence triangular shape defects previously observed in 4H-SiC pin diodes made on CVD epitaxial layers. These results agree with the morphology studies which indicate that the SSM-grown layers have a higher number of structural defects than their counterparts.

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Photoemission of 4H-SiC pin-Diodes Epitaxied by the Sublimation Method

Camara

Zekentes

Bano³

et al. 2006

MSF

View full text Add to dashboard Cite

show abstract

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A 4H-SiC p–i–n Diode Fabricated by a Combination of Sublimation Epitaxy and CVD

Cited by 1 publication

References 7 publications

Photoemission of 4H-SiC pin-Diodes Epitaxied by the Sublimation Method

Photoemission of 4H-SiC pin-Diodes Epitaxied by the Sublimation Method

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