A 4W GaAs Power Amplifier MMIC for Ku-band Satellite Communication Applications

Ryu, Kwangyeol; Ahn, Kwang–Ho; Kim, Sung‐Chan

doi:10.5573/jsts.2015.15.4.501

Cited by 2 publications

(2 citation statements)

References 7 publications

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“…GaN appears to be a superior candidate for the design of PAs when compared to GaAs and is becoming the technology of choice across frequency bands and markets. GaN amplifiers present a P sat the 36-46 -dBm range [106], [107], [108], [109], [110], [111], [112], while their GaAs counterparts are within the 34-40-dBm range [111], [112], [113], [114], [115], [116]. In addition, GaN PAs also show a superior PAE, which can surpass 40%, while GaAs PAs present PAEs of the order of 30%.…”

Section: Pasmentioning

confidence: 99%

Low-Earth Orbit User Segment in the Ku and Ka-Band: An Overview of Antennas and RF Front-End Technologies

Amendola

Cavallo

Chaloun³

et al. 2023

IEEE Microwave

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L ow-Earth orbit (LEO) constellations are revolutionizing the world of satellite communication (Satcom), providing new opportunities to manufacturers and operators and enabling innovative and attractive services to users. The main advantages of low-orbit satellite systems are • more extended coverage of the surface of Earth that permits the availability of Satcom links in areas not served by geostationary Earth orbit (GEO) systems • reduced latency that proves to be fundamental for real-time and mission-critical applications

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Section: Pasmentioning

confidence: 99%

Low-Earth Orbit User Segment in the Ku and Ka-Band: An Overview of Antennas and RF Front-End Technologies

Amendola

Cavallo

Chaloun³

et al. 2023

IEEE Microwave

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“…While GaAs pseudomorphic HEMTs (pHEMTs), characterized by low operating voltage, high electron mobility, and high maximum operating frequency, are actively used in transceiver modules, they require the application of additional limiters to block leaked power from the transmitter and to protect the receiver circuit from unwanted highinput power, which adversely affects both the size reduction of the module and the necessary low-noise performance. This drawback has contributed to a recent research trend focused on using GaN HEMTs on SiC in the receiver module [3][4][5][6][7][8].…”

Section: Introductionmentioning

confidence: 99%

Robust Ku-Band GaN Low-Noise Amplifier MMIC

Han,

Kim

2024

J. Electromagn. Eng. Sci

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This paper employs the 0.2 μm ETRI GaN HEMT process on SiC to develop a Ku-band GaN low-noise amplifier monolithic microwave integrated circuit (MMIC) characterized by high-input power robustness for radar transceiver modules. A source degeneration inductor is employed to obtain the proposed amplifier’s stable operation and the compromised impedance trajectory of the maximum available gain and minimum noise figure. The analysis results show simultaneous gain and noise impedance matching, achieved using only a small number of passive elements. Furthermore, the proposed low-noise amplifier MMIC secures a linear gain of 21.3−22.6 dB, an input return loss of 19.6−21.4 dB, and a noise figure of 1.7−1.8 dB in the 15–16 GHz frequency range. It also exhibits an input 1 dB compression point of 0.4−1.5 dBm in the single-tone power test, and an input third-order intercept point of 5.8−10.1 dBm within the 15−16 GHz frequency range in the two-tone intermodulation distortion test.

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A 4W GaAs Power Amplifier MMIC for Ku-band Satellite Communication Applications

Cited by 2 publications

References 7 publications

Low-Earth Orbit User Segment in the Ku and Ka-Band: An Overview of Antennas and RF Front-End Technologies

Low-Earth Orbit User Segment in the Ku and Ka-Band: An Overview of Antennas and RF Front-End Technologies

Robust Ku-Band GaN Low-Noise Amplifier MMIC

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