A 4Σ− state in the spectrum of SnH

Klynning, L.; Lindgren, B.; Åslund, N.

doi:10.1016/0031-9163(65)91041-3

Cited by 17 publications

(32 citation statements)

References 5 publications

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“…Therefore, individual values of e and e x e could not be deduced without a fourth data. The wavenumber of the very weak and diffuse (0 -1) band around 14 464 cm Ϫ1 might have been a candidate but the presence of a SnH impurity band (15), namely, the 0 P 4 2 (0 -0)( 4 ⌺ Ϫ -2 ⌸) band, made the assignment of the (0 -1) CuSn band problematic. Because of the lack of data relating to secondary sequences, observation of the weak blurred (1-1) band at 14 645 cm Ϫ1 allowed the calculation of vibrational parameters (Table 4) with an accuracy of 0.2 cm Ϫ1 .…”

Section: Cusn Spectrummentioning

confidence: 97%

Optical Spectroscopy of Diatomic Species: Copper with Group 14 Elements (Si, Ge, Sn, Pb)

Lefèbvre

Schamps

2000

Journal of Molecular Spectroscopy

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Section: Cusn Spectrummentioning

confidence: 97%

Optical Spectroscopy of Diatomic Species: Copper with Group 14 Elements (Si, Ge, Sn, Pb)

Lefèbvre

Schamps

2000

Journal of Molecular Spectroscopy

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“…5 are the calculated 20 line positions from a numerical simulation of the well-known spectroscopy of the SiH A 2 ⌬ -X 2 ⌸ transition. [20][21][22][23] The experimental spectrum is not corrected for variations in laser power and was obtained using a broader molecular beam than was used for the reactivity measurements in order to improve the signal levels. The good agreement between the calculated line positions and experimental spectra shows the fluorescing species is indeed SiH.…”

Section: A Spectroscopy Of Sihmentioning

confidence: 99%

A modified molecular beam instrument for the imaging of radicals interacting with surfaces during plasma processing

McCurdy

Bogart

Dalleska

et al. 1997

Review of Scientific Instruments

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Dissociative chemisorption of CH 4 on a cesiated Pt (111) A new instrument employing molecular beam techniques and laser induced fluorescence ͑LIF͒ for measuring the reactivity of gas phase radicals at the surface of a depositing film has been designed and characterized. The instrument uses an inductively coupled plasma source to create a molecular beam containing essentially all plasma species. A tunable excimer pumped dye laser is used to excite a single species in this complex molecular beam. LIF signals are imaged onto a gated, intensified charge coupled device ͑ICCD͒ to provide spatial resolution. ICCD images depict the fluorescence from molecules both in the molecular beam and scattering from the surface of a depositing film. Data collected with and without a substrate in the path of the molecular beam provide information about the surface reactivity of the species of interest. Here, we report the first measurements using the third generation imaging of radicals interacting with surfaces apparatus. We have measured the surface reactivity of SiH molecules formed in a 100% SiH 4 plasma during deposition of an amorphous hydrogenated silicon film. On a 300 K Si ͑100͒ substrate, the reactivity of SiH is near unity. The substrate temperature dependence ͑300-673 K͒ of the reactivity is also reported. In addition, reactivity measurements for OH molecules formed in a water plasma are presented. In contrast to the SiH molecule, the reactivity of OH radicals is 0.55Ϯ0.05 on the surface of a Si ͑100͒ substrate.

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“…This analysis was later modified by Mulliken (18). The spectra of SiH and SiD were reinvestigated by Rochester (19), Douglas (20), and Klynning and Lindgren (21). Rochester (19) obtained an analysis of the 0 -0 and 1-1 bands of SiH and the 0 -0 band of SiD, whereas Douglas (20) observed the SiH bands at a higher dispersion and analyzed 0 -0, 1-0, 2-1, and 2-2 bands.…”

Section: Introductionmentioning

confidence: 99%