A 5.4GHz 0.35μm BiCMOS FBAR resonator oscillator in above-IC technology

Aissi, Mohammed; Tournier, E.; Dubois, M.-A.; Parat, G.; Plana, R.

doi:10.1109/isscc.2006.1696169

Cited by 13 publications

(18 citation statements)

References 5 publications

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“…Gold has also been used for RFswitch applications and is being studied as a structural material for applications requiring low loss at high frequencies [78]. Piezoelectric materials have been integrated on top of the CMOS stack for RF applications such as surface acoustic wave (SAW) mechanical filters, thin-film bulk acoustic resonators (FBARs) or bulk acoustic wave (BAW) resonators [95], [96]. Zinc-oxide piezoelectric films have been shown to be compatible with CMOS processing, as demonstrated in an early multisensor chip [97].…”

Section: Mems-last Processesmentioning

confidence: 99%

Single‐Chip Scanning Probe Microscopes

Sarkar

Mansour²

2015

Micro‐ and Nanomanipulation Tools

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Scanning probe microscopes (SPMs) are the highest resolution imaging instruments available today and are among the most important tools in nanoscience. Conventional SPMs suffer from several drawbacks owing to their large and bulky construction and to the use of piezoelectric materials. Large scanners have low resonant frequencies that limit their achievable imaging bandwidth and render them susceptible to disturbance from ambient vibrations. Array approaches have been used to alleviate the bandwidth bottleneck; however as arrays are scaled upwards, the scanning speed must decline to accommodate larger payloads. In addition, the long mechanical path from the tip to the sample contributes thermal drift. Furthermore, intrinsic properties of piezoelectric materials result in creep and hysteresis, which contribute to image distortion. The tip-sample interaction signals are often measured with optical configurations that require large free-space paths, are cumbersome to align, and add to the high cost of state-of-the-art SPM systems. These shortcomings have stifled the widespread adoption of SPMs by the nanometrology community. Tiny, inexpensive, fast, stable and independent SPMs that do not incur bandwidth penalties upon array scaling would therefore be most welcome. A method to increase the quality factor (Q-factor) of flexural resonators is introduced. The method relies on an internal energy pumping mechanism that is based on the interplay between electrical, iv mechanical, and thermal effects. To the best of the author's knowledge, the devices that are designed to harness these effects possess the highest electromechanical Qs reported for flexural resonators operating in air; electrically measured Q is enhanced from ~50 to ~50,000 in one exemplary device. A physical explanation for the underlying mechanism is proposed.The design, fabrication, imaging, and tip-based lithographic patterning with the first single-chip Scanning Thermal Microscopes (SThMs) are also presented. In addition to 3 DOF scanning, these devices possess integrated, thermally isolated temperature sensors to detect heat transfer in the tip-sample region.Imaging is reported with thermocouple-based devices and patterning is reported with resistive heater/sensors. An "isothermal electrothermal scanner" is designed and fabricated, and a method to operate it is detailed. The mechanism, based on electrothermal actuation, maintains a constant temperature in a central location while positioning a payload over a range of >35μm, thereby suppressing the deleterious thermal crosstalk effects that have thus far plagued thermally actuated devices with integrated sensors.

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Section: Mems-last Processesmentioning

confidence: 99%

Single‐Chip Scanning Probe Microscopes

Sarkar

Mansour²

2015

Micro‐ and Nanomanipulation Tools

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“…The basic configuration of a BAW (Bulk Acoustic Wave) resonator is a piezoelectric thin film surrounded by two metal electrodes [43,44,45,46,47,48,49,50,51,52]. Fig.…”

Section: Piezoelectric Resonatorsmentioning

confidence: 99%

“…2.13 [43]. FBAR resonators can offer Q-factors in the range of 1k [43,44,45,46,47,48,49,50,52,53]. In [43], a duplexer based on FBAR resonators was fabricated working at 1900 MHz (the PCS band), which was 10 times smaller than its off-chip counterpart and it was better than a SAW duplexer in terms of power handling [46,47,48].…”

Section: Piezoelectric Resonatorsmentioning

confidence: 99%

“…FBAR resonators are extensively used in oscillator design leading to very low power and low phase-noise LO generations [43,44,45,49,53,56,58,59]. In most cases, the FBAR resonators are wire bonded to the transistor chip.…”

Section: Piezoelectric Resonatorsmentioning

confidence: 99%

“…In most cases, the FBAR resonators are wire bonded to the transistor chip. However, in [44], the resonator is directly integrated above the IC which leads to the reduction in the area. One of the issues of oscillators exploiting high-Q resonators is the limited tunability of this type of resonators which is mainly due to the inherent parallel capacitance of the resonators.…”

Section: Piezoelectric Resonatorsmentioning

confidence: 99%

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