2022
DOI: 10.1049/cds2.12123
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A 5.5–7.5‐GHz band‐configurable wake‐up receiver fully integrated in 45‐nm RF‐SOI CMOS

Abstract: This work investigates a 5.5–7.5‐GHz band‐configurable duty‐cycled wake‐up receiver (WuRX) fully implemented in a 45‐nm radio‐frequency (RF) silicon‐on‐insulator (SOI) complementary‐metal‐oxide‐semiconductor (CMOS) technology. Based on an uncertain intermediate frequency (IF) super‐heterodyne receiver (RX) topology, the WuRX analogue front‐end (AFE) incorporates a 5.5–7.5‐GHz band‐tunable low‐power low‐noise amplifier, a low‐power Gilbert mixer, a digitally controlled oscillator (DCO), a 100‐MHz IF band‐pass f… Show more

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“…CMOS (Complementary Metal-Oxide-Semiconductor) technology [4] is chosen for its advantages in terms of low cost, low power consumption, and compatibility with integration on a single chip with another RF circuitry [5]. Power efficiency is a critical requirement in modern RF receivers, especially in batteryoperated devices such as smartphones, IoT devices [6], and wireless sensors. The proposed VGA aims to minimize power consumption while maintaining high gain accuracy and linearity [7].…”
Section: Introductionmentioning
confidence: 99%
“…CMOS (Complementary Metal-Oxide-Semiconductor) technology [4] is chosen for its advantages in terms of low cost, low power consumption, and compatibility with integration on a single chip with another RF circuitry [5]. Power efficiency is a critical requirement in modern RF receivers, especially in batteryoperated devices such as smartphones, IoT devices [6], and wireless sensors. The proposed VGA aims to minimize power consumption while maintaining high gain accuracy and linearity [7].…”
Section: Introductionmentioning
confidence: 99%