A 5-Gb/s OEIC with voltage-up-converter

Swoboda, R.; Knorr, J.; Zimmermann, Horst

doi:10.1109/jssc.2005.847227

Cited by 15 publications

(3 citation statements)

References 17 publications

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“…Up to now, most (Bi)CMOS photodiodes for data-communication which can be found in literature have been integrated in silicon technologies with line-widths from 0.6 m [1], 0.5 m [2], [3] down to 0.35 m [4]. To enhance the optical performance of the photodiodes, additional masks are often added to the standard process.…”

Section: Introductionmentioning

confidence: 99%

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A High-Speed 850-nm Optical Receiver Front-End in 0.18-<tex>$muhbox m$</tex>CMOS

Hermans

Steyaert

2006

IEEE J. Solid-State Circuits

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A high-speed optical interface circuit for 850-nm optical communication is presented. Photodetector, transimpedance amplifier (TIA), and post-amplifier are integrated in a standard 0.18-m 1.8-V CMOS technology. To eliminate the slow substrate carriers, a differential n-well diode topology is used. Device simulations clarify the speed advantage of the proposed diode topology compared to other topologies, but also demonstrate the speed-responsivity tradeoff. Due to the lower responsivity, a very sensitive transimpedance amplifier is needed. At 500 Mb/s, an input power of 8 dBm is sufficient to have a bit error rate of 3 10 10. Next, the design of a broadband post-amplifier is discussed. The small-signal frequency dependent gain of the traditional and modified Cherry-Hooper stage is analyzed. To achieve broadband operation in the output buffer, so-called " doublers" are used. For a differential 10 mV pp 2 31 1 pseudo random bit sequence, a bit error rate of 5 10 12 at 3.5 Gb/s has been measured. At lower bit-rates, the bit error rate is even lower: a 1-Gb/s 10-mV pp input signal results in a bit error rate of 7 10 14. The TIA consumes 17 mW, while the post-amplifier circuit consumes 34 mW.

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Section: Introductionmentioning

confidence: 99%

“…To enhance the optical performance of the photodiodes, additional masks are often added to the standard process. For example, in [2] and [3], a PIN diode with a lowly doped intrinsic region is used. This way, there exists a large drift region where electrons and holes are generated and the quantum efficiency of the diode is high.…”

Section: Introductionmentioning

confidence: 99%

A High-Speed 850-nm Optical Receiver Front-End in 0.18-<tex>$muhbox m$</tex>CMOS

Hermans

Steyaert

2006

IEEE J. Solid-State Circuits

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“…It has high immunity against common-mode (CM) and supply noise, which is important given the high levels of electromagnetic interference in cars. Immunity against CM noise is also required in case a charge pump is used to increase bias voltage across the PD [8]. Furthermore, the loop gain characteristics (set by the differential response) can be determined independently from the DC-biasing voltages, which is advantageous over implementations such as in [7] given the required temperature range.…”

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confidence: 99%

BiCMOS variable gain transimpedance amplifier for automotive applications

et al. 2008

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A new BiCMOS variable gain transimpedance amplifier with a large area integrated photodiode for automotive applications is presented. Through careful control of the input pole position and the frequency response of the core amplifier, the bandwidth of the transimpedance amplifier varies from 112 to 300 MHz when its gain changes from 14.2 kV to 400 V. The proposed circuit configuration maintains a high voltage across a common anode photodiode, and its bandwidth in highest gain varies from 121 to 102 MHz over a temperature range of 240 to þ1408C. Simulation results in a 0.6 mm Si BiCMOS technology are given. The amplifier consumes 16 mW from a 3.3 V supply.Introduction: Optical transmission technology is increasingly used in cars as an alternative for copper-based solutions [1]. Optical receivers for automotive communication networks must cope with a high ambient temperature range (240 to þ1258C), be cost-effective and low power. Cost-effectiveness implies usage of an integrated photodiode (PD) with large diameter (430 mm in this Letter) to relax the mechanical alignment accuracy requirement, resulting in a high PD capacitance of 4.8 pF. PDs can be made using the p-substrate as an anode and an n þ contact as a cathode [2]. To ensure a fast PD and minimise its capacitance, its reverse bias must be high. This is challenging at a supply voltage of 3.3 V. Variable gain transimpedance amplifiers (TIAs) are needed to ensure high dynamic range. In [3], a variable gain TIA is realised by splitting the core amplifier into two parallel amplifiers and adding their outputs together in a weighted sum fashion. Variable gain was realised by adjusting the weighting factor. However, owing to the varying open-loop gain it is difficult to control the bandwidth and peaking of the frequency response. In [4][5][6], current switches at the input of the TIA are used to steer part of the photodiode current away from the TIA for high optical input power. However, the voltage drop across the current switches results in low bias voltage across a common anode PD. In [7], a Darlington input stage is combined with MOSFETs used as voltage-controlled resistors to achieve wide dynamic range. However, the Darlington input stage is not suitable for a supply voltage of 3.3 V, and the use of ten MOSFETs to control the gain and frequency response makes the circuit design over a wide temperature range difficult. In this Letter we propose a new circuit that overcomes these disadvantages, and can handle a junction temperature range of 240 to þ1408C.

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