A 5 GHz above-IC FBAR Low Phase Noise Balanced Oscillator

Aissi, Mohammed; Tournier, E.; Dubois, Marc; Billard, C.; Ziad, H.; Plana, R.

doi:10.1109/rfic.2006.1651082

Cited by 20 publications

(9 citation statements)

References 11 publications

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“…M ICROELECTROMECHANICAL Systems (MEMS) are considered good candidates for the replacement of quartz and surface acoustic wave (SAW) resonators for timing and frequency control applications thanks to their compatibility with integrated circuits (IC) and their relatively small form factor [1]- [4]. The adoption of MEMS resonators for oscillators and filters ultimately depends on their ability to achieve a high figure of merit (FoM).…”

Section: Introductionmentioning

confidence: 99%

Anchor Losses in AlN Contour Mode Resonators

Segovia-Fernandez

Cremonesi

Cassella

et al. 2015

J. Microelectromech. Syst.

134

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In this paper, we analyze possible sources of dissipation in aluminium nitride (AlN) contour mode resonators for three different resonance frequency devices (f r ) (220 MHz, 370 MHz, and 1.05 GHz). For this purpose, anchors of different widths (W a ) and lengths (L a ) proportional to the acoustic wavelength (λ) are designed as supports for resonators in which the dimensions of the vibrating body are kept fixed. The Q extracted experimentally confirms that anchor losses are the dominant source of damping for most anchor designs when f r is equal to 220 and 370 MHz. For specific anchor dimensions (W a /λ is in the range of 1/4-1/2) that mitigate energy leakage through the supports, a temperature-dependent dissipation mechanism dominates as seen in higher f r resonators operating close to 1.05 GHz. To describe the Q due to anchor losses, we use a finite-element method with absorbing boundary conditions. We also propose a simple analytical formulation for describing the dependence of the temperature-dependent damping mechanism on frequency. In this way, we are able to quantitatively predict Q due to anchor losses and qualitatively describe the trends observed experimentally.[ 2014-0232]Index Terms-AlN contour mode resonators, quality factor, anchor losses, temperature dependent dissipation, finite element analysis, perfectly matched layer. 1057-7157

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Section: Introductionmentioning

confidence: 99%

Anchor Losses in AlN Contour Mode Resonators

Segovia-Fernandez

Cremonesi

Cassella

et al. 2015

J. Microelectromech. Syst.

134

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“…Oscillators based on AlN TFBARs, wire-bonded on alumina substrates [4], [5], or to CMOS ICs [6], [7] have been reported. Furthermore, in [8], [9] AlN TFBARs are processed directly above BiCMOS ICs.…”

Section: Introductionmentioning

confidence: 99%

A 2 GHz oscillator using a monolithically integrated AlN TFBAR

Norling

Enlund

Katardjiev

et al. 2008

2008 IEEE MTT-S International Microwave Symposium Digest

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A 2 GHz oscillator based on a solidly mounted AlN Thin-Film Bulk Acoustic Resonator (TFBAR) is reported. The oscillator is realised as a silicon-on-silicon MultiChip Module (MCM) where all passive elements, including the TFBAR, are monolithically integrated on a HighResistivity Silicon (HRS) carrier. SiGe transistors are flipchip mounted on the MCM carrier.Measurements of the oscillators reveal a best phase-noise of −125 dBc/Hz at 100 kHz offset.

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“…M ICROELECTROMECHANICAL systems (MEMS) resonators have certain advantages over legacy technology, such as quartz crystals or surface acoustic wave devices that they can be fabricated directly on silicon and together with Integrated Circuits (IC) [1]- [4]. Because of this, they can offer a lower cost and integrated solution for the synthesis of high precision oscillators and filters, and will ultimately end up revolutionizing the sensing and telecommunication industry.…”

Section: Introductionmentioning

confidence: 99%

Thermal Nonlinearities in Contour Mode AlN Resonators

Segovia-Fernandez

Piazza

2013

J. Microelectromech. Syst.

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In this paper, we analyze the origin of elastic nonlinearities in aluminium nitride contour mode resonators (CMRs). Our study highlights that the nonlinear behavior is due to thermal effects when the resonators are electrically excited and the input is slowly (slow with respect to the device thermal time constant) swept through the excitation frequencies close to the main resonance. An analytical expression that relates the nonlinear behavior of the device to its geometry and material properties is derived. Amplitude-frequency (A-f) and third-order intermodulation (IMD3) measurements on 1-GHz AlN CMRs are employed to demonstrate the theoretical reasoning. The two experiments confirm the validity of the analytical derivation when the system is dominated by thermally induced nonlinearities. In the case of large frequency difference between the modulation frequencies, purely elastic nonlinearity can also be extracted from the IMD3 measurements.[ 2012-0264]Index Terms-Amplitude-frequency, contour mode AlN resonator, duffing equation, lumped electrical mode, thermal nonlinear effect, third-order intermodulation distortion.

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A 5 GHz above-IC FBAR Low Phase Noise Balanced Oscillator

Cited by 20 publications

References 11 publications

Anchor Losses in AlN Contour Mode Resonators

Anchor Losses in AlN Contour Mode Resonators

A 2 GHz oscillator using a monolithically integrated AlN TFBAR

Thermal Nonlinearities in Contour Mode AlN Resonators

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