A 50–67-GHz Ultralow-Power LNA Using Double-Transformer-Coupling Technique and Self-Resonant Matching in 90-nm CMOS

Li, Mu-Heng; Wang, Yunshan; Wang, Huei

doi:10.1109/lmwc.2021.3112465

Cited by 14 publications

(1 citation statement)

References 11 publications

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“…Both applications require compact and lowpower front-ends, usually incorporating a low-noise amplifier (LNA) in the receiver. While transmission-line-based LNA designs are more commonly used in the V-band [6][7][8] due to faster design times, lumped matching can reduce the chip size significantly and transformers can additionally improve performance [9][10][11][12][13][14]. For these it is important to have accurate design equations to accelerate the design phase.…”

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confidence: 99%

Analysis and design of a 55–74 GHz ultra‐compact low‐noise amplifier using highly asymmetric transformers

Becker

Morath

Schumann

et al. 2022

Electronics Letters

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This letter presents a low-noise amplifier with a 3 dB-bandwidth, from 55 to 74 GHz, excellent noise performance and low power consumption based on a three-stage common-source topology. For the first time to the authors' best knowledge, an analytical equation that also considers the gate-drain capacitance is derived for the employed shunt-series transformer feedback input matching network. To enable shunt-series transformer feedback matching without significant gain reduction a highly asymmetric transformer is designed. Furthermore, a compact transformer-implemented T-shaped output matching network is investigated to minimize the required area. To prove these concepts, the circuit has been fabricated in a 22 nm fully depleted silicon-on-insulator technology. Thanks to the transformer-based matching, an ultra-compact active footprint of 0.039 mm 2 is achieved. At a power consumption of 8.4 mW from a 0.41 V supply an average noise figure of 4.8 dB and a peak gain of 14.2 dB has been measured. In-and output matching better than −10 dB over the 19 GHz wide 3 dB-bandwidth are demonstrated.

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