A 50-nm 1.2-V Ge<inf>x</inf>Te<inf>1&#x2212;x</inf>/Sb<inf>2</inf>Te<inf>3</inf> superlattice topological-switching random-access memory (TRAM)

High Resolution Imaging of Chalcogenide Superlattices for Data Storage Applications: Progress and Prospects

“…Until 2015 there was a dominant belief in a switching mechanism where Ge atomic planes at the interface between GeTe and Sb 2 Te 3 would show a kind of collective umbrella flip, with only debate about the details of such flip . Then a paper was published directly showing that GeTe–Sb 2 Te 3 superlattices reconfigure into alternating GST and Sb 2 Te 3 when grown at a usual temperature of 230 °C and completely reconfigure into the stable (trigonal) crystal structure of GST when annealed at 400 °C .…”

First principles investigation of the unipolar resistive switching mechanism in an interfacial phase change memory based on a GeTe/Sb2Te3superlattice

“…[14][15][16] Thus, the GeTe layers are sandwiched between thicker Sb 2 Te 3 layer than the primitive cell. Table I and Fig.…”

“…In an actual iPCM, the Sb 2 Te 3 layer in the superlattice is 4 nm thick, which is four times greater than the thickness of a primitive cell in a GeTe= Sb 2 Te 3 superlattice. 12,[14][15][16] Moreover, the GeTe=Sb 2 Te 3 superlattice is grown on a thicker Sb 2 Te 3 layer (5 nm). [14][15][16] Thus, the GeTe layers are sandwiched between thicker Sb 2 Te 3 layer than the primitive cell.…”

“…12,[14][15][16] Moreover, the GeTe=Sb 2 Te 3 superlattice is grown on a thicker Sb 2 Te 3 layer (5 nm). [14][15][16] Thus, the GeTe layers are sandwiched between thicker Sb 2 Te 3 layer than the primitive cell. Table I and Fig.…”

“…iPCM is a new type of PCM, developed for use as a high speed and low-power-consumption non volatile memory. [12][13][14][15][16] A conventional PCM consists of Ge 2 Sb 2 Te 5 (GST) alloy sandwiched between electrodes. The memory operation is attributed to crystalline-amorphous phase transitions in the GST alloy as shown in Fig.…”