A 500 kHz Silicon Carbide (SiC) Single Switch Class-E Inverter

Abstract

Increased demand for intelligence in high performance applications such as home appliance, transportation, renewable energy systems, medical equipment and utilities interfaces, while managing cost, efficiency and volume is a challenge for inverter topologies. In addition, increased efficiency and optimal operation require complex control schemes, which require a large processing budget and expensive sensors. Advances in power semiconductor technology has revolutionized the industry, where signal processing methods and analog electronic topologies are being employed to process power. A Class-E inverter is a topology borrowed from amplifiers for DC to AC conversion. Class-E inverters promise an upgrade solution, where a single switch may be used for full wave inversion. Using this resonant topology promises to mitigate the need for complex control schemes, as only one switch must be controlled. Previous attempts at building Class-E converters, have been limited to smaller power ratings, as the switch experience's high voltage and current stress. SiC power semiconductor devices have been commercially available for the past few years, and offer several key advantages such as: faster switching speeds, higher voltage and current surge withstand capabilities, smaller overall system footprint and simpler cooling systems. This paper describes a 500 kHz Silicon Carbide (SiC) Class-E Inverter.  Index Terms-class-E inverter, DC-AC conversion, high frequency power electronics, single switch, resonant inverter, silicon carbide