IEEE International Solid-State Circuits Conference
DOI: 10.1109/isscc.1989.48269
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A 500 MHz 16*16 complex multiplier using self-aligned gate heterostructure FET technology

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“…Another complex number multiplier was reported by Akinwande et al [4]. It is a very fast implementation in GaAs heterostructure FET technology and therefore the level of integration is fairly low, resulting in only partial implementation of the multiplier.…”
Section: Im[p] = (A -B)d + B(c + D)mentioning
confidence: 99%
“…Another complex number multiplier was reported by Akinwande et al [4]. It is a very fast implementation in GaAs heterostructure FET technology and therefore the level of integration is fairly low, resulting in only partial implementation of the multiplier.…”
Section: Im[p] = (A -B)d + B(c + D)mentioning
confidence: 99%