A 500 MHz carbon nanotube transistor oscillator

Pesetski, Aaron A.; Baumgardner, James E.; Krishnaswamy, S. V.; Zhang, H.; Adam, J.D.; Kocabaş, Coşkun; Banks, Tony; Rogers, John A.

doi:10.1063/1.2988824

Cited by 30 publications

(27 citation statements)

References 12 publications

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“…REVIEW www.advmat.de Similar to power amplifiers, oscillators, which represent another important component in analog RF systems, have been demonstrated with oscillation frequencies as high as 500 MHz. [322] We note that separate efforts recently demonstrated single-SWNT devices as mixers [332] and as mechanical oscillators [333] for certain components of different kinds of radios.…”

Section: Carbon-nanotube Transistor Radio: a Functional High-frequencmentioning

confidence: 99%

“…[321] This section summarizes recent efforts to measure and optimize the high-frequency response of SWNT TFTs, focusing on results obtained from conventional scattering-parameter measurements. Collections of devices configured as oscillators, [322] resonant antennas, RF amplifiers, mixers, and audio amplifiers provide examples of all of the key building blocks for RF analog electronics technology, with functional, allnanotube transistor radios as demonstration systems. [323]…”

Section: Swnt Thin-film Radio-frequency Analog Electronicsmentioning

confidence: 99%

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Ultrathin Films of Single‐Walled Carbon Nanotubes for Electronics and Sensors: A Review of Fundamental and Applied Aspects

2009

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Ultrathin films of single‐walled carbon nanotubes (SWNTs) represent an attractive, emerging class of material, with properties that can approach the exceptional electrical, mechanical, and optical characteristics of individual SWNTs, in a format that, unlike isolated tubes, is readily suitable for scalable integration into devices. These features suggest the potential for realistic applications as conducting or semiconducting layers in diverse types of electronic, optoelectronic and sensor systems. This article reviews recent advances in assembly techniques for forming such films, modeling and experimental work that reveals their collective properties, and engineering aspects of implementation in sensors and in electronic devices and circuits with various levels of complexity. A concluding discussion provides some perspectives on possibilities for future work in fundamental and applied aspects.

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Section: Carbon-nanotube Transistor Radio: a Functional High-frequencmentioning

confidence: 99%

Section: Swnt Thin-film Radio-frequency Analog Electronicsmentioning

confidence: 99%

Ultrathin Films of Single‐Walled Carbon Nanotubes for Electronics and Sensors: A Review of Fundamental and Applied Aspects

2009

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“…As mentioned in Section 3, RF transistors have been demonstrated at frequencies up to 10 GHz, with relatively coarse device dimensions. Connection to other components, e.g., inductors and resistors, yields radio frequency power amplifiers [52] and oscillators [59], two of the most important building blocks of analog electronic systems. As an example, these devices can be then connected and impedance matched to yield functional radio receiving systems, where the SWNT TFTs provide all of the active components including even the audio output amplifi er stage, as shown in Fig.…”

Section: Analog Radio Frequency Electronicsmentioning

confidence: 99%

Random networks and aligned arrays of single-walled carbon nanotubes for electronic device applications

2008

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Singled-walled carbon nanotubes (SWNTs), in the form of ultrathin fi lms of random networks, aligned arrays, or anything in between, provide an unusual type of electronic material that can be integrated into circuits in a conventional, scalable fashion. The electrical, mechanical, and optical properties of such fi lms can, in certain cases, approach the remarkable characteristics of the individual SWNTs, thereby making them attractive for applications in electronics, sensors, and other systems. This review discusses the synthesis and assembly of SWNTs into thin film architectures of various types and provides examples of their use in digital electronic circuits with levels of integration approaching 100 transistors and in analog radio frequency (RF) systems with operating frequencies up to several gigahertz, including transistor radios in which SWNT transistors provide all of the active functionality. The results represent important steps in the development of an SWNT-based electronics technology that could fi nd utility in areas such as fl exible electronics, RF analog devices and others that might complement the capabilities of established systems.

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“…extensively in transistors, amplifiers, and even fully integrated transistor radios [15][16][17][18]. In addition, arrays provide a natural path toward large scale integration, in which the spatial position and electronic properties of any given tube in the array are not critically important; the large numbers of tubes that contribute to operation of a given device yield statistical averaging effects that can provide good device-to-device uniformity in properties.…”

mentioning

confidence: 99%

Theoretical and experimental studies of Schottky diodes that use aligned arrays of single-walled carbon nanotubes

Rotkin

et al. 2010

Nano Res.

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We present theoretical and experimental studies of Schottky diodes that use aligned arrays of single-walled carbon nanotubes. A simple physical model, taking into account the basic physics of current rectification, can adequately describe the single-tube and array devices. We show that for as-grown array diodes, the rectification ratio, defined by the maximum-to-minimum-current-ratio, is low due to the presence of metallic-single-walled nanotube (SWNT) shunts. These tubes can be eliminated in a single voltage sweep resulting in a high rectification array device. Further analysis also shows that the channel resistance, and not the intrinsic nanotube diode properties, limits the rectification in devices with channel length up to 10 μm. KEYWORDSSchottky diodes, aligned arrays, single-walled carbon nanotubesSince the earliest days of work on semiconductor devices, diodes have played critically important roles. Theories of p-n Schottky diodes [1, 2] laid the foundations for understanding bi-polar transistor operation and contact phenomena at the metal/semiconductor interface. Even though the diode itself is not a main element of modern digital electronics, the physics of the diode structure is essential for many applications, including in optoelectronics [3]. Nanoscale diodes have been already demonstrated with carbon-based nanomaterials, such as graphene and individual nanotubes [4][5][6][7][8][9][10][11][12][13][14]. The work presented here focuses on diode structures made of parallel nanotube arrays, their rectification properties, and the physics of their electronic transport. The array format is advantageous because they deliver much larger currents than a single-tube device and have less noise, enabling them to operate at high frequency as we have demonstrated Nano Res (2010) 3: 444-451

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A 500 MHz carbon nanotube transistor oscillator

Cited by 30 publications

References 12 publications

Ultrathin Films of Single‐Walled Carbon Nanotubes for Electronics and Sensors: A Review of Fundamental and Applied Aspects

Ultrathin Films of Single‐Walled Carbon Nanotubes for Electronics and Sensors: A Review of Fundamental and Applied Aspects

Random networks and aligned arrays of single-walled carbon nanotubes for electronic device applications

Theoretical and experimental studies of Schottky diodes that use aligned arrays of single-walled carbon nanotubes

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