A 500W Push-Pull AlGaN/GaN HEMT Amplifier for L-Band High Power Application

Maekawa, A.; Yamamoto, Takashi; Mitani, Eizo; Sano, S.

doi:10.1109/mwsym.2006.249735

Cited by 35 publications

(8 citation statements)

References 3 publications

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“…This is the reason that they have been mostly employed in microwave, broadband radio frequency (RF), radar and wireless communication power amplifiers. [6]- [11] Due to the superior electronic properties of the GaN material and the possibility to use SiC substrate demonstrating high thermal conductivity (3.5 W/cm.K), power densities as high as 30 W/mm @ 4 GHz [3] as well as output power of 500 W @ 1.5 GHz [4] have already been achieved. An output power of 75 W of a packaged single-ended GaN-FET has been reported under pulsed conditions for L/S band applications [5].…”

Section: Introductionmentioning

confidence: 99%

Designing, Fabrication and Characterization of Power Amplifiers Based on 10-Watt SiC MESFET & GaN HEMT at Microwave Frequencies

Azam

Jönsson

Wahab

2008

2008 38th European Microwave Conference

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This paper describes the design, fabrication and measurement of two single-stage class-AB power amplifiers covering the frequency band from 0.7-1.8 GHz using a SiC MESFET and a GaN HEMT. The measured maximum output power for the SiC amplifier at V d = 48 V was 41.3 dBm (~13.7 W), with a PAE of 32 % and a power gain above 10 dB. At a drain bias of V d = 66 V at 700 MHz the P max was 42.2 dBm (~16.6 W) with a PAE of 34.4 %. The measured results for GaN amplifier are; maximum output power at V d = 48 V is 40 dBm (~10 W), with a PAE of 34 % and a power gain above 10 dB. The results for SiC amplifier are better than for GaN amplifier for the same 10-W transistor.

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Section: Introductionmentioning

confidence: 99%

Designing, Fabrication and Characterization of Power Amplifiers Based on 10-Watt SiC MESFET & GaN HEMT at Microwave Frequencies

Azam

Jönsson

Wahab

2008

2008 38th European Microwave Conference

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“…The power handling capability also depends on the glass transition temperature of the substrate material and coaxial dielectric [28], [29]. Ferriteless baluns [3], [4] with power handling capabilities from 500 W to 700 W have been reported but have a narrow operating bandwidth. The non-ferrite high-power balun in [4] uses conventional quarter wavelength coaxial cables on ceramic substrates to achieve a bandwidth ratio of 2:1 around a center frequency of 725 MHz.…”

Section: Introductionmentioning

confidence: 99%

Design of 600-W Low-Loss Ultra-Wideband Ferriteless Balun

Pham

Leoni

2018

IEEE Trans. Microwave Theory Techn.

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Abstract-We present the development of a low loss, high power, and ferriteless balun that operates over 0.1-1.6 GHz bandwidth. The proposed balun employs a novel compensated circuit, a single quarter-wave semi-rigid coaxial cable and an on-board inductor on a thermoset ceramic board to achieve high power and ultra-wide bandwidth performance. The experimental results show that the balun achieves a measured average insertion loss of less than 0.5 dB and return loss of better than 10 dB from 100 MHz to more than 1.6 GHz. Within the measured bandwidth, the amplitude and phase imbalances are within ±1 dB and ±5°, respectively. Multiphysics analysis and high power measurements demonstrate that the balun can handle more than 600 W and above at 1.6 GHz. To the best of our knowledge, the reported balun has the highest measured power handling capability per the largest 16:1 bandwidth ratio to date.Index Terms-Transmission line balun, wide bandwidth balun, defected ground structure, semi-rigid coaxial cable, multiphysics analysis, power handling capability.

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“…Current HPAs include the L-band 500 W [1] and S-band 800 W [2], but HPAs with output powers of more than 100 W have been reported even in the high frequency bands (C-, X-and Ku-bands) [3,4]. A power added efficiency (PAE) of 80% is achieved for output power of 16.5 W [5].…”

Section: Introductionmentioning

confidence: 99%

A 2.4 GHz-Band 100 W GaN-HEMT High-Efficiency Power Amplifier for Microwave Heating

Nakatani¹,

Ishizaki²

2015

Journal of electromagnetic engineering and science

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The magnetron, a vacuum tube, is currently the usual high-power microwave power source used for microwave heating. However, the oscillating frequency and output power are unstable and noisy due to the low quality of the high-voltage power supply and low Q of the oscillation circuit. A heating system with enhanced reliability and the capability for control of chemical reactions is desired, because microwave absorption efficiency differs greatly depending on the object being heated. Recent studies on microwave high-efficiency power amplifiers have used harmonic processing techniques, such as class-F and inverse class-F. The present study describes a high-efficiency 100 W GaN-HEMT amplifier that uses a harmonic processing technique that shapes the current and voltage waveforms to improve efficiency. The fabricated GaN power amplifier obtained an output power of 50.4 dBm, a drain efficiency of 72.9%, and a power added efficiency (PAE) of 64.0% at 2.45 GHz for continuous wave operation. A prototype microwave heating system was also developed using this GaN power amplifier. Microwaves totaling 400 W are fed from patch antennas mounted on the top and bottom of the microwave chamber. Preliminary heating experiments with this system have just been initiated. This is an Open-Access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/ by-nc/3.0) which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited. ⓒ

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A 500W Push-Pull AlGaN/GaN HEMT Amplifier for L-Band High Power Application

Cited by 35 publications

References 3 publications

Designing, Fabrication and Characterization of Power Amplifiers Based on 10-Watt SiC MESFET & GaN HEMT at Microwave Frequencies

Designing, Fabrication and Characterization of Power Amplifiers Based on 10-Watt SiC MESFET & GaN HEMT at Microwave Frequencies

Design of 600-W Low-Loss Ultra-Wideband Ferriteless Balun

A 2.4 GHz-Band 100 W GaN-HEMT High-Efficiency Power Amplifier for Microwave Heating

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A 500W Push-Pull AlGaN/GaN HEMT Amplifier for L-Band High Power Application

Cited by 35 publications

References 3 publications

Designing, Fabrication and Characterization of Power Amplifiers Based on 10-Watt SiC MESFET &#x00026; GaN HEMT at Microwave Frequencies

Designing, Fabrication and Characterization of Power Amplifiers Based on 10-Watt SiC MESFET &#x00026; GaN HEMT at Microwave Frequencies

Design of 600-W Low-Loss Ultra-Wideband Ferriteless Balun

A 2.4 GHz-Band 100 W GaN-HEMT High-Efficiency Power Amplifier for Microwave Heating

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Designing, Fabrication and Characterization of Power Amplifiers Based on 10-Watt SiC MESFET & GaN HEMT at Microwave Frequencies

Designing, Fabrication and Characterization of Power Amplifiers Based on 10-Watt SiC MESFET & GaN HEMT at Microwave Frequencies