A 57–74-GHz Tail-Switching Injection-Locked Frequency Tripler in 28-nm CMOS

Iotti, Lorenzo; LaCaille, Greg; Niknejad, Ali M.

doi:10.1109/lssc.2019.2933158

Cited by 21 publications

(13 citation statements)

References 8 publications

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“…In the range of 1 k to 10 MHz offset frequency, the output phase noise degradation is about 10 dB, which is consistent with the theoretical value 20log(3). 14 Figure 11 illustrates the fundamental rejection of the ILFT. In the whole operating frequency range, >27 dB rejection is obtained.…”

Section: Simulation Resultsmentioning

confidence: 99%

“…[6][7][8] Alternatively, the subharmonic oscillator cascaded frequency multiplier is another feasible method to generate high frequency. [9][10][11][12][13][14][15] Injection-locked frequency multiplier (ILFM) is often utilized to realize frequency multiplication. Compared with conventional frequency multipliers, [9][10][11] the ILFM can achieve stable output power at low power consumption.…”

Section: Introductionmentioning

confidence: 99%

“…Compared with conventional frequency multipliers, [9][10][11] the ILFM can achieve stable output power at low power consumption. [12][13][14][15] However, the ILFM often suffers from a narrow locking range (LR). Several techniques have been proposed to overcome the limitation.…”

Section: Introductionmentioning

confidence: 99%

“…However, the phase noise and power consumption are limited by the varactor with low quality factor at mm‐wave 6–8 . Alternatively, the subharmonic oscillator cascaded frequency multiplier is another feasible method to generate high frequency 9–15 …”

Section: Introductionmentioning

confidence: 99%

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A 21.6–30.3 GHz injection‐locked frequency tripler with Darlington injection for 5G communication systems

Qian

et al. 2021

Circuit Theory & Apps

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This paper proposes an injection locked frequency tripler which can cover 27 GHz frequency band of the fifth generation communication. By adopting the Darlington cell as injectors, the injection current is improved greatly and thus obtains a wide locking range. In addition, an inductive peaking technique is proposed to enhance the fundamental rejection and further improve the locking range. Implemented in 0.13 μm Complementary Metal Oxide Semiconductor (CMOS) technology, the post-layout simulation in collaboration with electromagnetic simulation is used to validate the proposed injection locked frequency tripler. The Precess Voltage Temperature (PVT) and Monte Carlo analysis are also performed to check the robustness of the circuit. At 0 dBm injection power, the injection locked frequency triple displays a 33.5% locking range and larger than 27 dB fundamental rejection, while consumes 8.3 mW from 1.2 V supply voltage. The core area is 0.56 × 0.23 mm 2 .

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Section: Simulation Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

A 21.6–30.3 GHz injection‐locked frequency tripler with Darlington injection for 5G communication systems

Qian

et al. 2021

Circuit Theory & Apps

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“…To generate a large harmonic current, the injection transistors work in the class-B mode [9,21,22,23], and the neutralization capacitor CN is specially added to enhance its gain performance [24,25]. To improve the ILFT working efficiency, a 3 rd harmonic LC tail filter is connected at the injection transistor source terminal [19,26,27,28,29,30]. Fig.…”

Section: Circuit Design and Analysismentioning

confidence: 99%

A 31.5-to-40.5 GHz injection-locked CMOS frequency tripler with injection-current enhancement technique

Wang

et al. 2020

IEICE Electron. Express

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This letter presents an injection-locked 36 GHz frequency tripler (ILFT) for 5G applications. With the high order transformer based LC tank, over the target operating frequency range its phase response is flat at around 0 degree, and the injection-current is enhanced with a 3 rd harmonic LC tail filter, thereby achieving a wide locking range. Fabricated in a 65nm CMOS process, the ILFT consumes about 7.2 mW from a 0.6 V supply, and its core area without the output buffer and input matching network is only 0.25×0.4 mm 2 . With 0 dBm input injection power, the proposed ILFT achieves a locking range from 31.5 to 40.5 GHz (25%).

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A 22.7‐ to 44.2‐GHz Darlington dual‐injection injection‐locked frequency tripler with >35dBc harmonic rejection for multiband 5G communication systems

Wang²,

Qian

et al. 2021

Circuit Theory & Apps

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This paper presents an ultra-wideband varactor-less injection-locked frequency tripler (ILFT) based on Darlington dual-injection topology targeting millimeter-wave multiband fifth generation (5G) communication systems. By utilizing the proposed Darlington dual-injection injector, the current injection efficiency is improved; thus, the locking range is extended significantly without introducing the varactors. In addition, the Darlington dual-injection topology enhances the harmonic rejection performance by suppressing undesired harmonics. Implemented in 65-nm CMOS (Complementary Metal Oxide Semiconductor) technology, the proposed ILFT can operate from 22.7 to 44.2 GHz and consumes 6.2 mA at 1.2 V supply voltage. The harmonics rejection is more than 35 dBc and occupies 0.17 mm 2 .

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A 57–74-GHz Tail-Switching Injection-Locked Frequency Tripler in 28-nm CMOS

Cited by 21 publications

References 8 publications

A 21.6–30.3 GHz injection‐locked frequency tripler with Darlington injection for 5G communication systems

A 21.6–30.3 GHz injection‐locked frequency tripler with Darlington injection for 5G communication systems

A 31.5-to-40.5 GHz injection-locked CMOS frequency tripler with injection-current enhancement technique

A 22.7‐ to 44.2‐GHz Darlington dual‐injection injection‐locked frequency tripler with >35dBc harmonic rejection for multiband 5G communication systems

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