A 6–20 GHz Adaptive SiGe Image Reject Mixer for a Self-Healing Receiver

Saha, Prabir; Howard, Duane C.; Shankar, Subramaniam; Diestelhorst, R.M.; England, Troy; Cressler, John D.

doi:10.1109/jssc.2012.2201284

Cited by 19 publications

(6 citation statements)

References 26 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This can be solved by the digital compensation techniques in the IF path [120] or LO path. Similarly, self-healing circuits, which can detect, isolate, and repair their own faults produced by the process variations, incorporate with the MMW mixers will possibly become popular [219]. With the evolution of the communication systems, multi-features with digital control mechanism in a MMW VCO are essential.…”

Section: Conclusion and Future Trendsmentioning

confidence: 99%

Advances in Silicon Based Millimeter-Wave Monolithic Integrated Circuits

et al. 2014

View full text Add to dashboard Cite

Abstract:In this paper, the advances of the silicon-based millimeter-wave (MMW) monolithic integrated circuits (MMICs) are reported. The silicon-based technologies for MMW MMICs are briefly introduced. In addition, the current status of the MMW MMICs is surveyed and novel circuit topologies are summarized. Some representative MMW MMICs are illustrated as design examples in the categories of their functions in a MMW system. Finally, there is a conclusion and description of the future trend of the development of the MMW ICs.

show abstract

Section: Conclusion and Future Trendsmentioning

confidence: 99%

Advances in Silicon Based Millimeter-Wave Monolithic Integrated Circuits

et al. 2014

View full text Add to dashboard Cite

show abstract

“…Recently, SiGe HBTs have attracted great attentions in the future wireless communication and some extreme environments, due to the more excellent performance than Si device, higher integration level than III‐V device and built‐in total ionizing dose tolerance . Accurate physically oriented model of SiGe HBTs is quite important for fabrication process evaluation, device structure optimization and circuit designing.…”

Section: Introductionmentioning

confidence: 99%

Novel method to determine base resistance in sige HBT from small‐signal S‐parameters measurement

Sun

Wang

et al. 2017

Micro & Optical Tech Letters

View full text Add to dashboard Cite

A novel and robust method to determine the internal variable base resistance (RB) of SiGe HBT from small‐signal S‐parameters measurement is developed in present work. The proposed method is adopted in two kinds of SiGe HBT compact models, MEXTRAM and HICUM. With the aid of auxiliary collector resistance, the lower and upper limits of RB are built up and a narrow variation range of RB is obtained. Thus, RB can be directly estimated from the small‐signal S‐parameters measurement. The proposed method is successfully applied to several sizes of SiGe HBTs and the experiment results shows that average error between the lower and upper limits of RB is less than 3% over a wide range of bias points, which can satisfy the demands of most engineering applications. Therefore, we believe that the proposed technique is a reliable routine applicable to estimate the base resistance in SiGe HBTs. © 2017 Wiley Periodicals, Inc. Microwave Opt Technol Lett 59:555–560, 2017

show abstract

“…VGLNAs have the ability to reduce the gain of the system when a high power signal is received at the input and extend the dynamic range of the system. Variable gain amplifiers (VGAs) can be placed after down-conversion mixers and operate at low frequencies without stringent noise figure requirements [1], but this often creates difficult linearity requirements for the mixer. Utilizing a VGLNA early in the receiver chain can relax the linearity requirements for all subsequent components.…”

Section: Introductionmentioning

confidence: 99%

A digitally-controlled seven-state X-band SiGe variable gain low noise amplifier

Schmid

Cressler

2014

2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)

Self Cite

View full text Add to dashboard Cite

This work describes the design of a digitallycontrolled seven-state variable gain low noise amplifier. The amplifier utilizes separately biased transistor cores to activate additional transistor area and change the amplifier gain. Variable gain low noise amplifiers enable greater dynamic range in RF receivers and provide amplitude control for phased-array systems. The amplifier was fabricated in a 180 nm SiGe BiCMOS technology platform featuring SiGe HBTs with an f T /f max of 240/260 GHz. When all transistor cores are activated, the amplifier achieves 16.5 dB of gain and a noise figure of 1.6 dB at 10 GHz. A gain variation of 7 dB from the maximum to the minimum state is demonstrated. In addition, the noise figure, linearity, and gain all improve with increasing transistor area and power dissipation, indicating an optimum state can be selected to meet receiver requirements while minimizing power dissipation.

show abstract

A 6–20 GHz Adaptive SiGe Image Reject Mixer for a Self-Healing Receiver

Cited by 19 publications

References 26 publications

Advances in Silicon Based Millimeter-Wave Monolithic Integrated Circuits

Advances in Silicon Based Millimeter-Wave Monolithic Integrated Circuits

Novel method to determine base resistance in sige HBT from small‐signal S‐parameters measurement

A digitally-controlled seven-state X-band SiGe variable gain low noise amplifier

Contact Info

Product

Resources

About