2012
DOI: 10.1587/elex.9.590
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A 6-32GHz T/R switch in 0.18-µm CMOS technology

Abstract: Abstract:This paper presents a broadband single-pole doublethrow (SPDT) transmit/receive (T/R) switch implemented in a standard 0.18-µm CMOS technology. The switch uses a grounded inductor, transistors in deep n-type wells, resistive body-floating components, a negative control voltage, and lowpass networks to improve its insertion losses, power-handling capabilities, and isolation. Moreover, the switch featuring a bandpass response results from the grounded inductor and the lowpass networks. To select T/R mod… Show more

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Cited by 6 publications
(4 citation statements)
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“…However, both GaAs and SOS technologies need expensive substrate and extra CMOS-based digital circuits. Although standard bulk CMOS technology provides good system integration capability [13], it suffers from poor linearity and high IL due to RF coupling through the lossy substrate and parasitic effects [14,15,16,17,18]. Because of high integration capability, low parasitic capacitance, and low substrate losses, SOI CMOS technology is proved to be an excellent candidate for switch design [19,20,21,22].…”
Section: Introductionmentioning
confidence: 99%
“…However, both GaAs and SOS technologies need expensive substrate and extra CMOS-based digital circuits. Although standard bulk CMOS technology provides good system integration capability [13], it suffers from poor linearity and high IL due to RF coupling through the lossy substrate and parasitic effects [14,15,16,17,18]. Because of high integration capability, low parasitic capacitance, and low substrate losses, SOI CMOS technology is proved to be an excellent candidate for switch design [19,20,21,22].…”
Section: Introductionmentioning
confidence: 99%
“…The RF module expects that RF switches are able to have excellent isolation, minimal insertion loss and high power handling. At present, the common high power handling switching processes are SOI [1,2,3,4,5], GaAs [6,7,8], GaN [9,10,11] and CMOS [12,13,14,15,16]. Since the GaN requires high supply voltage and the CMOS has a high leakage current and parasitic capacitance, GaAs and SOI are frequently used in wireless terminal applications now.…”
Section: Introductionmentioning
confidence: 99%
“…Compared to the positive-intrinsic-negative (PIN) diode [5,6], micro-electro-mechanical systems (MEMS) [7,8], and gallium arsenide (GaAs) psuedomorphic high electron mobility transistor (pHEMT) [9,10], Silicon-oninsulator (SOI) CMOS process shares the important features of being fast, reliable, and highly integratable, and thus, becomes a preferred choice for switch applications [11,12,13,14]. The low break-down voltage and conductive substrate limit the standard bulk CMOS for RF switch applications [15,16,17]. In a partially-deleted (PD) technology [18], both floating body (FB) and body contacted (BC) FETs are offered [19].…”
Section: Introductionmentioning
confidence: 99%