“…The RF module expects that RF switches are able to have excellent isolation, minimal insertion loss and high power handling. At present, the common high power handling switching processes are SOI [1,2,3,4,5], GaAs [6,7,8], GaN [9,10,11] and CMOS [12,13,14,15,16]. Since the GaN requires high supply voltage and the CMOS has a high leakage current and parasitic capacitance, GaAs and SOI are frequently used in wireless terminal applications now.…”