A 6–46 GHz, high output power distributed frequency doubler using stacked FETs in 0.25 μm GaAs pHEMT

A 4–20 GHz, multi‐watt level, fully integrated push–pull distributed power amplifier with wideband even‐order harmonic suppression

“…In this paper, we present the design of a 4–20 GHz wideband, push–pull distributed power amplifier (PA) in a low‐cost, 0.25 µm GaAs pseudomorphic high electron mobility transistor (pHEMT) process. The key contributions of the design are (i) The use of triple‐stacked field‐effect transistor (FET) in a DA to achieve higher power [10, 11]. The non‐uniform distributed topology helps to transform the load impedance of the stacked FET cell to a lower value, which helps to reduce the large load impedance mismatch [3, 4] and (ii) the first fully integrated DA in a push–pull configuration to reduce the even‐order harmonics in wide bandwidth applications. The experimental results show that the fully integrated PA achieves 32–35.4 dBm of saturated power P sat from 4–20 GHz and 33 dBc second harmonic suppression from 8 to 40 GHz at the P1 dB operating condition.…”

“…(i) The use of triple‐stacked field‐effect transistor (FET) in a DA to achieve higher power [10, 11]. The non‐uniform distributed topology helps to transform the load impedance of the stacked FET cell to a lower value, which helps to reduce the large load impedance mismatch [3, 4] and…”