A 6 watt Ka-band MMIC power module using MMIC power amplifiers

Ingram, D. L.; Stones, D.I.; Huang, Tian-Wei; Nishimoto, M.; Wang, H.; Siddiqui, M.; Tamura, Douglas T.; Elliott, J.; Lai, R.; Biedenbender, M.; Yen, H.C.; Allen, B.

doi:10.1109/mwsym.1997.596538

Cited by 14 publications

(3 citation statements)

References 11 publications

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“…As lower frequency bands become saturated, communication providers are now focusing on the Ka band for next-generation terrestrial systems, such as satellite communication systems, wireless local area networks (LANs), local multipoint distribution system (LMDS), personal communications network links, and digital radio. As a result, research activities in Ka-Band HPAs have also increased significantly in recent years [1][2][3][4][5]. Ka-band terrestrial systems require HPAs with compact size and high reliability.…”

Section: Introductionmentioning

confidence: 99%

“…One-dimensional wire grids and 2D metal meshes are widely used as elements of quasi-optical devices: polarizing filters, deflectors, quasi-optical gratings, semi-transparent mirrors, different coupling elements, and so forth [1]. Numerous models have been developed to estimate the reflectance of these elements [2][3][4][5][6]. However, these models' accuracy becomes poor when the size of the mesh's cell or the distance between wires are comparable with wavelength.…”

Section: Introductionmentioning

confidence: 99%

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Ka‐band 1‐W PHEMT MMIC power amplifiers on 2mil‐thick GaAs substrates

Huang

Chang

et al. 2005

Micro & Optical Tech Letters

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ABSTRACT:A fully matched Ka-band INTRODUCTIONLow cost, light weight, high yield, and good reliability are key issues for the successful development of missile seekers, electronic warfare, smart munitions, and commercial point-to-point communication applications. With the maturing of pseudomorphic highelectron-mobility transistor (PHEMT) technology, monolithic millimeter-wave integrated circuit (MMIC) high-power amplifiers (HPAs) can offer all the above benefits. These PHEMT MMIC HPAs have also generated considerable interest in the electronicpower community in recent years. On the other hand, the demand for broadband-data distribution has increased significantly. As lower frequency bands become saturated, communication providers are now focusing on the Ka band for next-generation terrestrial systems, such as satellite communication systems, wireless local area networks (LANs), local multipoint distribution system (LMDS), personal communications network links, and digital radio. As a result, research activities in Ka-Band HPAs have also increased significantly in recent years [1][2][3][4][5]. Ka-band terrestrial systems require HPAs with compact size and high reliability. These HPAs also need to be mass producible in order to reduce the cost. Although traveling-wave tube amplifiers (TWTAs) can be used in Ka-band terrestrial systems, solid-state power amplifiers (SSPAs) are less expensive, smaller in size, lighter in weight, and more reliable. Indeed, the performances of GaAs-based PHEMT microwave monolithic integrated HPAs have been drastically improved in the past decade. In fact, GaAs-based PHEMTs have already been extensively used as SSPAs in Ka-band terrestrial systems. As the performances of GaAs-based PHEMTs are further improved, these devices will continue to offer significant performance enhancements for applications in satellite and ground-based communication systems. To reduce the production cost of Ka-band HPAs, we can use lumped-element matching circuits to miniaturize the size of GaAs-based MMIC chips. On the other hand, we can use multistage configurations to achieve large output power. However, the circuit complexity increases significantly as the number of amplifier stages increases. It should be noted, however, that conventional GaAs-based PHEMTs have been fabricated on 4-mil-thick GaAs substrates [6 -8]. Recent development of the 2-mil-thick GaAs PHEMT fabrication technology has made it possible to pack more power within the same device periphery and to provide a lower production cost without sacrificing the device performance. This article describes the design, fabrication, and testing of Ka-band HPAs using lumped-element matching circuits and 2-mil-thick GaAs PHEMT fabrication technology. The proposed two-stage AlGaAs/InGaAs/GaAs PHEMT MMIC [9,10] HPA delivers a 1-W output and a linear power gain larger than 10 dB in the frequency range between 30 and 37 GHz. This amplifier is designed to fully match 50⍀ input and output impedances without any external circuit. Figure 1 shows the designed tw...

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Ka‐band 1‐W PHEMT MMIC power amplifiers on 2mil‐thick GaAs substrates

Huang

Chang

et al. 2005

Micro & Optical Tech Letters

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“…Although InP-based HEMT MMICs have demonstrated excellent power performance at Wband [2], GaAs-based HEMT MMIC technology was selected for this project due to the process maturity. The 2-mil GaAs HEMT PAS not only demonstrated good power performance with high yield at W-band (94 GHz) [l], but also showed impressive results from Ka-to V-band [3]- [6]. In this work, three sets of PA chips and their driver amplifiers covering 72-81, 90-101, and 100-113 GHz were designed, fabricated and tested.…”

Section: Introduction W-band Mmic Power Amplifiers (Pas) Have Been Developed For Transmitter Applicationsmentioning

confidence: 99%

Monolithic power amplifiers covering 70-113 GHz

Wang

Samoska

Gaier

et al.

2000 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium Digest of Papers (Cat. No.00CH37096)

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A number of monolithic W-band power amplifiers (PAS) have been developed for local oscillators of the Far Infrared and Submillimeter Telescope (FIRST). These PA chips include three driver and three power amplifiers covering most of the W-band, i.e., the frequency ranges of 72-81, 90-101, and 100-113 GHz. Each driver ampliiier and power amplifier provides at least 20 and 22 dBm (160 mw), respectively in the frequency range it covers. The 100-113 GHz power amplifier has a peak power of greater than 250 mW (25 dBm) at 105 GHz, which is the best output power performance for a monolithic amplifier above 100 GHz to date. These monolithic chips are fabricated using 0.1-pm AlGaAs/InGaAs/GaAs pseudomorphic T-gate power HEMTs on a 2-mil GaAs substrate.

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Millimeter‐Wave Integrated Circuits

Wang,

Lin,

Liu

et al. 2005

Encyclopedia of RF and Microwave Engineering

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Millimeter‐wave (MMW) components are becoming more available and affordable because of advances in design, processing, testing, and packaging technology. MMW circuits have become smaller, highly integrated, and low‐cost, and are being applied in instrumentation, electronic warfare, satellite communications and other applications. As a result, many MMW systems are being developed and deployed that provide new and unique capabilities such as more information transfer (wider bandwidth), enhanced precision (higher resolution), and all‐weather operation (through fog, dust, and smoke), for both military and commercial applications. Monolithic MMW integrated circuits (MMICs) are crucial to meet the requirements for the MMW systems and play an important role in the MMW components. This article describes the current status of MMW monolithic integrated circuits, including the MMIC technologies, representative designs, and performance for various integrated circuits.

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A 6 watt Ka-band MMIC power module using MMIC power amplifiers

Cited by 14 publications

References 11 publications

Ka‐band 1‐W PHEMT MMIC power amplifiers on 2mil‐thick GaAs substrates

Ka‐band 1‐W PHEMT MMIC power amplifiers on 2mil‐thick GaAs substrates

Monolithic power amplifiers covering 70-113 GHz

Millimeter‐Wave Integrated Circuits

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