A 60 GHz, 802.11ad/WiGig-Compliant Transceiver for Infrastructure and Mobile Applications in 130 nm SiGe BiCMOS

Abstract

A fully integrated 802.11ad/WiGig compliant 60 GHz transceiver is presented in a 130 nm SiGe BiCMOS technology. Encompassing an area of 2.3 mm 2.16 mm 4.97 mm , the transceiver covers the entire 60 GHz band, from 57 to 66 GHz. Within this span, the RX NF, TX OP1dB, and PLL RMS jitter is better than 5.5 dB, 13.5 dBm, and 7 , respectively. The transceiver is packaged in 1) a system-in-package substrate with industry standard WR-15 transition providing an approximate 1 dB insertion loss, and 2) a cost-effective 7 7 mm organic BGA package with integrated transmit and receive antennas providing 8 dBi gain. In system-level testing, the transceiver is fully compliant with all TX EVM and RX sensitivity requirements of the WiGig standard up to the top-rate 16-QAM operating mode and across all standard channel frequencies. Link testing over the air with the antenna-integrated package shows a range of 5.9 m at 4.6 Gbps and over 20 m at 2.5 Gbps. This system achieves the highest performance 802.11ad/WiGig compliant wireless links of any reported single-element transceiver.

A 1.2 GHz bandwidth and 88 dB gain range analog baseband for multi-standard 60 GHz applications

“…8. Simulation results show that the proposed ABB gain switching time from 0.8 to 60.7 dB is less than [31,32]. The measured performance is summarized and compared with the prior works as shown in Table II.…”

Millimeter-Wave and Terahertz Transceivers in SiGe BiCMOS Technologies

“…The receiver supported a 5-Gb/s data transmission experiment using 16-QAM [orthogonal frequency-division multiplexing (OFDM)] modulation. Finally, an 802.11ad/WiGig-compliant transceiver in SiGe in an organic ball-grid array (BGA) package with in-package antennas was presented in [130]. The largest EIRP of +45 dBm, so far, has been demonstrated using a wafer-scale approach, where 256 elements were combined in a massive single wafer array [131].…”

5G Cellular User Equipment: From Theory to Practical Hardware Design

“…The noise figure of the mmWave receiver varies with different IC processes, and for the state-of-the-art CMOS designs in [6] and [46], NF is 7.1 dB and 8 dB, respectively. For the design using more advanced IC process such as SiGe, BiCMOS, NF of a receiver can achieve 6.8 dB [30] and 5.5 dB [47]. Considering the superior cost-effectiveness of the CMOS process and its widespread use, it is reasonable to assume that 5G receiver NF is around 7 dB.…”