A 60 GHz Variable Gain Amplifier with a Low Phase Imbalance in 0.18 &amp;#956;m SiGe BiCMOS Technology

Byeon, Chul Woo; Song, In Sang; Cho, Seong Jun; Kim, Hong Yi; Lee, Chaejun; Park, Chul Soon

doi:10.1109/csics.2012.6340101

Cited by 7 publications

(1 citation statement)

References 12 publications

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“…Recently, variable gain amplifiers (VGA) and power gain control designs such as power divider and combiners in the transmitter/receiver (T/R) chain are commonly implemented in modern communication systems. However, fully passive attenuators have advantages over VGAs used in transceivers of the phased‐array systems, for example, no required DC power consumption, precise output amplitude and high linearity.…”

Section: Introductionmentioning

confidence: 99%

A 4‐bit ultra‐wideband complementary metal‐oxide‐semiconductor attenuator with low root‐mean‐square amplitude error

Pakasiri

Zhu

Wang

2019

Int J RF Microw Comput Aided Eng

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This article presents the 4-bit ultra-wideband complementary metal-oxidesemiconductor (CMOS) attenuator in a standard 0.18-μm CMOS process. This design adopts switched bridge-T type topologies for each attenuation bit. Based on insertion losses and input P 1-dB considerations, the circuit performances can be optimized by the proper bit ordering arrangement. Therefore, the bit ordering 0.5-4-2-1 dB is employed in the 4-bit attenuator. Moreover, series inductors are added between each bit to further improve the input and output return losses. Measured results demonstrate that the attenuation range of the circuit is 7.5 dB with 0.5 dB step and the root-mean-square (RMS) amplitude error is between 0.11 and 0.13 dB from 3.1 to 10.8 GHz. The differences between simulated and measured RMS amplitude errors are less than 0.2 dB, which demonstrates the good agreement and feasibility of the design concept. The measured input P 1-dB is 15 dBm at 5 GHz and the chip area is 1.12 mm 2 including all testing pads. K E Y W O R D Sattenuator, CMOS, RMS amplitude error, ultra-wideband

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Section: Introductionmentioning

confidence: 99%

A 4‐bit ultra‐wideband complementary metal‐oxide‐semiconductor attenuator with low root‐mean‐square amplitude error

Pakasiri

Zhu

Wang

2019

Int J RF Microw Comput Aided Eng

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A 60‐GHz variable gain amplifier with low phase and OP1dB variation

Byeon

Park

2019

Micro & Optical Tech Letters

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This article presents a 60 GHz variable gain amplifier (VGA) with a low phase and output 1‐dB gain compression point (OP1dB) variation for phased‐array applications. The VGA employs a two‐stage modified current‐steering cascode. Implemented in 0.18‐μm SiGe BiCMOS technology, the VGA has a gain control range of 20.4 dB with a maximum gain of 17.7 dB at 60 GHz. The OP1dB variation is only 2.3 dB for all gain states at 60 GHz with a DC power consumption of 50 mW, and the measured phase variation is less than 4.8° at 57 to 66 GHz.

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Variable gain wideband LNA in 130 nm SiGe HBT technology with stepped impedance micro-strip open circuited stubs for minimum transmission phase variation for WiGig phased array receivers

Pournamy

Ponnambalam

2022

J Comput Electron

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A 60 GHz Variable Gain Amplifier with a Low Phase Imbalance in 0.18 μm SiGe BiCMOS Technology

Cited by 7 publications

References 12 publications

A 4‐bit ultra‐wideband complementary metal‐oxide‐semiconductor attenuator with low root‐mean‐square amplitude error

A 4‐bit ultra‐wideband complementary metal‐oxide‐semiconductor attenuator with low root‐mean‐square amplitude error

A 60‐GHz variable gain amplifier with low phase and OP1dB variation

Variable gain wideband LNA in 130 nm SiGe HBT technology with stepped impedance micro-strip open circuited stubs for minimum transmission phase variation for WiGig phased array receivers

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