A 60-nm-thick enhancement mode In_0.65Ga_0.35As/InAs/In_0.65Ga_0.35As high-electron-mobility transistor fabricated using Au/Pt/Ti non-annealed ohmic technology for low-power logic applications

Abstract

A 60-nm-thick E-mode In 0.65 Ga 0.35 As/InAs/In 0.65 Ga 0.35 As high-electron-mobility transistor (HEMT) was successfully fabricated and evaluated by using Au/Pt/Ti-based non-annealed ohmic technology for high-speed and low-power logic applications. The device exhibited a minimal SS of 69 mV/decade, a lower DIBL of 30 mV/V, an I ON /I OFF ratio above 1.2 ' 10 4 at V DS = 0.5 V and a high f T of 378 GHz and f max of 214 GHz at V DS = 1.0 V. These results demonstrate that non-annealed ohmic contacts can be used for fabricating E-mode In 0.65 Ga 0.35 As/InAs/In 0.65 Ga 0.35 As HEMTs with excellent electrical characteristics. The fabricated HEMTs are likely to find use in future high-speed and low-power logic applications.