A 62 GHz inductor-peaked rectifier with 7% efficiency

Gao, Hao; Matters-Kammerer, Marion K.; Milošević, Dušan; Roermund, Arthur van; Baltus, Peter

doi:10.1109/rfic.2013.6569557

Cited by 26 publications

(13 citation statements)

References 10 publications

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“…This large shunt will load the input matching network minimally. This is opposite to the cases in [20] and [21]. In the inductor-peaking method, from the passive network will be a small at the resonant frequency, as shown in Fig.…”

Section: In-phase Voltage Multipliermentioning

confidence: 78%

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A Millimeter-Wave In-Phase Gate-Boosting Rectifier

Wang

Liao

Tsai

et al. 2014

IEEE Trans. Microwave Theory Techn.

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This paper introduces a new class of RF-to-dc rectifiers called the in-phase gate-boosting rectifier (IGR). An IGR utilizes an in-phase passive voltage multiplier (IPVM) to boost in-phase swing from the driving swing. This design simultaneously reduces the effective threshold voltage, forward resistance, and the reverse leakage current of the rectifying transistor. As a consequence, the sensitivity and the efficiency of a high-frequency rectifier can be improved. Furthermore, a -loaded IPVM presents low input conductance and is shunted with the drains/sources of the rectifying transistors. This makes the realization of the input matching network between the IGR core and the antenna easier, and achieves a higher voltage swing at the input terminals of the IGR core. The criteria, properties, and relating proofs of the IPVM are also discussed. A differential seven-stage millimeter-wave IGR is implemented in a 65-nm RF CMOS process. In this design, an interleaving internal threshold cancellation bias scheme is also introduced to further suppress the power consumption due to biasing circuitry without increasing the layout area. The implemented integrated circuit achieves a state-of-the-art 7-dBm sensitivity with 20% peak efficiency at 53 GHz and a bandwidth of 10 GHz from 46 to 56 GHz. Index Terms-Energy harvesting, rectifying circuits. 0018-9480

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Section: In-phase Voltage Multipliermentioning

confidence: 78%

“…The philosophy of treating the rectifying transistor as a threeterminal device is adopted in the inductor-peaking method proposed in [20] and [21]. Instead of ac-coupling drain voltage to the transistor's gate voltage, this approach utilized an inductor to generate a larger gate voltage swing, as shown in Fig.…”

Section: Introductionmentioning

confidence: 99%

A Millimeter-Wave In-Phase Gate-Boosting Rectifier

Wang

Liao

Tsai

et al. 2014

IEEE Trans. Microwave Theory Techn.

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“…A 60 GHz rectenna was developed with MMIC technology at Eindhoven University of Technology, Netherland [31]. They indicated that several low impedance paths caused by parasitic capacitances lead to a trade-off between isolation and insertion-loss at 60 GHz.…”

Section: Various Rectennas II -Higher Frequency and Dual Bands -mentioning

confidence: 99%

Rectennas for microwave power transmission

Shinohara

2013

IEICE Electron. Express

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Microwave power transmission (MPT) has had a long history before the more recent movement toward wireless power transmission (WPT). MPT can be applied not only to beam-type point-to-point WPT but also to an energy harvesting system fed from distributed or broadcasting radio waves. The key technology is the use of a rectenna, or rectifying antenna, to convert a microwave signal to a DC signal with high efficiency. In this paper, various rectennas suitable for MPT are discussed, including various rectifying circuits, frequency rectennas, and power rectennas.

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“…The inductor, together with parasitic capacitances of the MOSFET in resonance, boosts the voltage at the gate, increasing in that way the gate-source voltage. In [4] a peak efficiency of 7% is reported for 1 mA load when the rectifier is excited with -14.5 dBm input power at 62 GHz. For that power level the rectifier produces about 100mV of output voltage.…”

Section: Introductionmentioning

confidence: 99%

“…In [3] 4.4% efficiency is obtained with 7 dBm input power at 60 GHz when the rectifier is loaded by 1.5kΩ. Another threshold modulation technique is reported in [4] and [5] where the inductor is placed between the gate and drain of a MOSFET. The inductor, together with parasitic capacitances of the MOSFET in resonance, boosts the voltage at the gate, increasing in that way the gate-source voltage.…”

Section: Introductionmentioning

confidence: 99%

A novel high efficiency CMOS RF/DC power harvester based on constant on/off time buck controller for 60GHz frequency band

Ninic¹,

Djuric²

2017

Serb J Electr Eng

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A novel 60 GHz RF/DC power harvesting system is presented. The system consists of RF to DC rectifier and a DC/DC Buck converter based on constant ON/OFF time (COOT) control. The rectifier has a structure of voltage doubler, but employs diodes that have lower parasitics compared to those of the standard MOSFET diodes, resulting in improved power conversion efficiency. The peak efficiency of the rectifier obtained with the extracted parasitics for the output power of 1 mW is about 25%. In order to keep the output voltage of the system to 1.2 V, the COOT control in the Buck converter is used. COOT control has much better efficiency at low output powers compared to the PWM systems. For correct operation of the COOT control, auxiliary sub-blocks: a low power high-speed comparator, a hysteresis comparator, and a high-speed voltage reference are designed and presented. The maximum switching frequency in the Buck converter is about 100MHz and the whole control system has very low static power consumption. The efficiency of the overall system for the output power of 1mW is about 21%. The system is designed in 65 nm CMOS technology.

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A 62 GHz inductor-peaked rectifier with 7% efficiency

Cited by 26 publications

References 10 publications

A Millimeter-Wave In-Phase Gate-Boosting Rectifier

A Millimeter-Wave In-Phase Gate-Boosting Rectifier

Rectennas for microwave power transmission

A novel high efficiency CMOS RF/DC power harvester based on constant on/off time buck controller for 60GHz frequency band

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