1982 IEEE International Solid-State Circuits Conference. Digest of Technical Papers 1982
DOI: 10.1109/isscc.1982.1156311
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A 64Kb CMOS RAM

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Cited by 21 publications
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“…Figure 3 depicts another topology [3] employing both NMOS and PMOS cross-coupled pairs and allowing rail-to-rail swings. In this case, X and Y are precharged to VDD and then connected to the memory cell.…”
Section: Sense Amplifiersmentioning
confidence: 99%
“…Figure 3 depicts another topology [3] employing both NMOS and PMOS cross-coupled pairs and allowing rail-to-rail swings. In this case, X and Y are precharged to VDD and then connected to the memory cell.…”
Section: Sense Amplifiersmentioning
confidence: 99%