The successful operation of a 650 GHz unilateral finline superconductorinsulator-superconductor mixer with a wide IF bandwidth is reported. The mixer was fabricated using silicon-on-insulator (SOI) technology, with planar circuit on-chip integration. The mixer was tested over the frequency range of 630-702 GHz, and the best recorded DSB noise temperature was 226 K. The measured RF and IF behaviour of the mixer agreed very well with the simulation predictions. This demonstrates that superconducting finline mixers fabricated on an SOI substrate can achieve state-of-the-art performance, and yet are much more compact and highly reproducible, and hence suitable for largeformat arrays in astronomy instruments, at THz frequencies.Introduction: A clear way to improve the mapping speed of a submillimetre heterodyne receiver is to construct a multi-pixel focal plane array. Apart from the high sensitivity required, mixer designs that are easy-to-fabricate and highly reproducible will then be essential. In this Letter, we describe a compact and easy-to-fabricate superconductorinsulator-superconductor (SIS) mixer design which is feasible for large format imaging arrays in the sub-millimetre band. A key feature of our design is that the mixer is deposited on one side of a 15-μm-thick silicon-on-insulator (SOI) substrate, fed by a multiple-flare angle smooth-walled horn [1]. The signal from the horn is coupled with a superconducting tunnel junction through a unilateral finline taper, and a single-stage slotline-to-microstrip transition. This enables us to fabricate the majority of the mixer using well-established superconducting planar circuit technology, as shown in Fig. 1. Since the mixer does not require a back short or an E-plane tuner, the only mechanical components required are the smooth-walled horn and a straight waveguide to house the mixer chip. The fabrication of these components is straightforward and insensitive to machining tolerance.