ESSCIRC 2017 - 43rd IEEE European Solid State Circuits Conference 2017
DOI: 10.1109/esscirc.2017.8094593
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A 65nm CMOS 2×2 MIMO multi-band LTE RF transceiver for small cell base stations

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Cited by 10 publications
(11 citation statements)
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“…The resonant can be derived from admittance condition Y IN − UB − odd = 0 or impedance condition Z IN − UB − odd = ∞, 1 or it has a denominator equal with zero. Z5()Z5,e+Z5,o2+Z6Z4cotθ4tanθ5+Z4()Z5,e+Z5,o2cotθ4tanθ4Z5,e+Z5,o22tanθ5tanθ6=0 …”
Section: Dual‐band Bpf Based On Source‐load Coupling With Stub‐block mentioning
confidence: 99%
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“…The resonant can be derived from admittance condition Y IN − UB − odd = 0 or impedance condition Z IN − UB − odd = ∞, 1 or it has a denominator equal with zero. Z5()Z5,e+Z5,o2+Z6Z4cotθ4tanθ5+Z4()Z5,e+Z5,o2cotθ4tanθ4Z5,e+Z5,o22tanθ5tanθ6=0 …”
Section: Dual‐band Bpf Based On Source‐load Coupling With Stub‐block mentioning
confidence: 99%
“…A highly flexible RF device must be supported by a high‐performance bandpass filter (BPF) that can be controlled. This requirement has motivated many researchers to produce BPFs with controllable performance 1 . Several methods have been proposed to control the frequency passband, such as the stepped impedance ring resonator (SIRR) with shorted stubs, 2 defected and irregular stepped‐impedance resonators (DI‐SIRs), 3 multilayer resonator, 4 loop resonator, 5 cross resonator, 6 substrate‐integrated waveguide (SIW) cavities, 7 and half‐mode substrate integrated waveguide (HMSIW) 8 .…”
Section: Introductionmentioning
confidence: 99%
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“…This can be further seen, that there are only a handful of papers (up to the year of 2019) on GaAs/GaN and other III-V semiconductor based transceivers published. Moreover, the articles published under the latter conditions present only an integrated high-end part (mixers, amplifiers and biasing) without any digital capabilities (de Sousa et al, 2004;Villain et al, 2000;Boveda & Ortigoso, 1995;Liberati & Calori, 2008;Lim, Lee et al, 2017;Dyadyuk, Shen & Stokes, 2014). An article (Pettenpaul, 1998) provided a discussion on the application of hetero-devices in GaAs and Si and can be summarized as follows:…”
Section: Fig 12 Modern Transceiver Block Diagrammentioning
confidence: 99%
“…The RF switches and switchable matching networks may help in achieving a wide frequency tuning range; however, the soaring number of radios and frequency bands will require additional tuning circuitry in a limited volume [17]- [23]. In the context of transmitter, a reconfigurable antenna ideally requires one or more multiband transmitters along with on-chip/off-chip tuning networks and RF switches [24]. Some transmitters have been proposed [25]- [27], yet the die area and the bulky off-chip tuning networks are major issues.…”
Section: Introductionmentioning
confidence: 99%