A 68% P.A.E. power pHEMT for K-band satellite communication system

Satoh, T.; Betti-Berutto, A.; Poledrelli, C.; Khandavalli, C.; Nikaido, J.; Kuroda, S.; Yokoyama, Tsuyoshi; Fukaya, J.

doi:10.1109/mwsym.1999.779546

Cited by 14 publications

(2 citation statements)

References 6 publications

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“…shows typical Id vs. Vd characteristics of the pHEMT with 600um gate width. [1] The maximum drain current (Imax) is 400mA/mm and saturated drain current (Ids) at Vgs=0V is 100mA/mm. Figure 3 shows characteristics of the transconductance (gm) of power pHEMT.…”

Section: Power Phemt Characteristicsmentioning

confidence: 99%

A Gate Bias Free Power MMIC Module for Ka-Band High-speed Wireless Applications

Ichikawa

Satoh

Betti-Berutto

et al. 2000

30th European Microwave Conference, 2000

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A high power and high gain packaged power MMIC module for Ka-band applications operating under a single polarity bias supply has been developed for the first time. This PA module consists of two pseudomorphic HEMT MMICs, with Lg=0.25um, packaged in a single power module. These MMICs operate without a gate bias control voltage when the gate bias is shunted in the package. This PA module provides 30dBm output power and approximately 30dB of gain in the 27-31GHz range. The single bias supply operation provides significant cost advantage to the device manufacture as well as the end user since there is no need to design a gate control bias network.

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Section: Power Phemt Characteristicsmentioning

confidence: 99%

A Gate Bias Free Power MMIC Module for Ka-Band High-speed Wireless Applications

Ichikawa

Satoh

Betti-Berutto

et al. 2000

30th European Microwave Conference, 2000

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“…The most important frequency bands of the point to point and LMDS radio links applications are 18, 23, 26, 29, 31 and 38 GHz. To achieve the high power level required by the mmWave radio link applications, a 0.25µm Power pHEMT technology has been used in the MMICs development [1]. To cover most of the frequency bands involved, we developed an 18 to 32GHz broadband driver amplifier, FMM5804.…”

mentioning

confidence: 99%

High Power GaAs MMIC Chipsets for 18 to 32 GHz Frequency Band Applications

Betti-Berutto

Poledrelli

Benelbar

et al. 2000

30th European Microwave Conference, 2000

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Recent commercial wireless applications such as Point to Point radio links, LMDS (Local Multipoint Distribution Service), LMCS (Local multi-point Communications Service) and Commercial K-Band Satellite based services have spurred significant activity in development of mmWave power amplifiers. These applications lie in the frequency range of 18 to 42GHz with possible future extensions to 60GHz. These systems employ digital modulation schemes for which highly linear mmWave power amplifiers are essential. This paper presents an overview of some chipsets consisting of High Power amplifiers covering the frequency range of 18 to 32GHz. Preferred solutions to a low cost subsystem vary from one subsystem manufacturer to another as it involves assembly and test capabilities in addition to component costs. The overall direction appears to be toward multi-chip module assemblies. Here, both chip and packaged level component options are considered. SUMMARYThe transmitter section in a radio, such as a Point to Point and LMDS radio, requires the integration of several chips such as pre-driver, driver and output stages with desirable functions such as of on-chip power detection. The data modulation schemes are mostly digital, such as QPSK and QAM, which demand very stringent linearity specifications at system level to ensure the quality of the signal. This translates to the need for developing higher output power modules, providing for increased power consumption, more complex MMIC chip assemblies ..etc. The most important frequency bands of the point to point and LMDS radio links applications are 18, 23, 26, 29, 31 and 38 GHz. To achieve the high power level required by the mmWave radio link applications, a 0.25µm Power pHEMT technology has been used in the MMICs development [1]. To cover most of the frequency bands involved, we developed an 18 to 32GHz broadband driver amplifier, FMM5804. The MMIC has 18dB of gain, 23 dBm of output power and is fully matched [2]. The photograph of the MMIC is shown in Figure 1. Good return loss and broadband stability make this amplifier easy to integrate in a multi-chip environment.

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