A 7 GHz compact transimpedance amplifier TIA in CMOS 0.18 µm technology

Abu-Taha, Jawdat; Yazgi, Metin

doi:10.1007/s10470-016-0689-1

Cited by 14 publications

(1 citation statement)

References 22 publications

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“…Regarding the state-of-the-art of RCG TIAs, Table 3 gives a summary of the most relevant performances of TIAs. By considering the first order of FoM defined as a gain bandwidth product [5], and compared with the performed FoM in [15,16,[20][21][22][23], the proposed circuit provides the better one while consuming 5.34 mW of power consumption from 1.2 V supply voltage. In addition, it gives a good performance in terms of input referred noise except for [16], this is due to the noise added by the load of the booster.…”

Section: Simulation Results and Discussionmentioning

confidence: 99%

Design and analysis of CMOS RCG transimpedance amplifier based on elliptic filter approach

Salhi¹,

Slimane

Hammoudi³

et al. 2018

IET Circuits, Devices & Systems

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This study presents a new design of compact transimpedance amplifier (TIA) for optical communication applications. By adopting the regulated common gate (RCG) topology, the proposed amplifier is designed and synthesised based on a thirdorder elliptic filter approach. Implemented in 0.13 μm complementary metal oxide semiconductor technology, the post layout simulation results provide 50 dB Ω of direct current gain, 15 GHz of bandwidth, 20 pA/ Hz as an input referred noise current performance. The proposed RCG TIA occupies a 19 × 36 μm 2 while consuming 5.34 mW under 1.2 V supply voltage, only.

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Section: Simulation Results and Discussionmentioning

confidence: 99%

Design and analysis of CMOS RCG transimpedance amplifier based on elliptic filter approach

Salhi¹,

Slimane

Hammoudi³

et al. 2018

IET Circuits, Devices & Systems

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Wideband inductorless transimpedance amplifier using capacitive degeneration and negative capacitance

Singh

Gupta

2020

Int J Numerical Modelling

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This paper presents a new wideband inductorless CMOS transimpedance amplifier (TIA) for 10Gb/s applications. In this proposed TIA, inverter-based common-drain active feedback topology is modified by introducing a cascode transistor to reduce input impedance. Furthermore, capacitive degeneration and negative capacitance techniques are employed by using a single capacitor. Both techniques extend the bandwidth. Mathematical analysis of the proposed TIA has been done using the small signal model to describe bandwidth extension. To verify the theoretical description, the proposed TIA is simulated using TSMC 0.18 μm CMOS technology at 1.8 V power supply with 4.3 mW power consumption. The input photodiode capacitance is 0.25 pF. Simulation results show the transimpedance gain of 51.4 dBΩ and 7.6 GHz bandwidth. The input noise current spectral density is 27 pA/√Hz.

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Improving the bandwidth of the transimpedance amplifier based on CS stages in cascode configuration using impedance matching techniques

Abu-Taha

Yazgi

2016

Analog Integr Circ Sig Process

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A 7 GHz compact transimpedance amplifier TIA in CMOS 0.18 µm technology

Cited by 14 publications

References 22 publications

Design and analysis of CMOS RCG transimpedance amplifier based on elliptic filter approach

Design and analysis of CMOS RCG transimpedance amplifier based on elliptic filter approach

Wideband inductorless transimpedance amplifier using capacitive degeneration and negative capacitance

Improving the bandwidth of the transimpedance amplifier based on CS stages in cascode configuration using impedance matching techniques

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