A 70 MHz - 4.1 GHz 5th-Order Elliptic gm-C Low-Pass Filter in Complementary SiGe Technology

Lei, Yuan; Krithivasan, R.; Kuo, Wei-Min Lance; Li, Xiangtao; Cressler, John D.; Gustat, H.; Heinemann, B.

doi:10.1109/bipol.2006.311118

Cited by 11 publications

(15 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Compared to the filters in [3] and [5], this filter reaches much higher BW. The filter presented in [8] has 4.1-GHz BW compared to our 3.2 GHz. However, our design does not require fast p-n-p transistors and is implemented in a standard SiGe process, which means that it can be powered from generic 3.3-V power supply compared to 3.5 V reported in [8].…”

Section: Resultsmentioning

confidence: 90%

“…The filter presented in [8] has 4.1-GHz BW compared to our 3.2 GHz. However, our design does not require fast p-n-p transistors and is implemented in a standard SiGe process, which means that it can be powered from generic 3.3-V power supply compared to 3.5 V reported in [8]. On-chip area needed for our CTF is much smaller compared to other high frequency CTFs [3] and [8].…”

Section: Resultsmentioning

confidence: 90%

See 1 more Smart Citation

A 1.6–3.2-GHz Sixth-Order ${+}$13.1-dBm OIP3 Linear Phase ${ g}_{ m}$-$C$ Filter for Fiber-Optic EDC Receivers

Baranauskas

Zelenin

Bussmann³

et al. 2010

IEEE Trans. Microwave Theory Techn.

View full text Add to dashboard Cite

A sixth-order low-pass -filter for fiber-optic electrical dispersion compensation receivers cascades three biquads permitting a reduction of group delay variation down to 10 ps. A cutoff frequency is tuned from 1.6 to 3.2 GHz by using two methods, namely, changing and switching a CMOS varactor's polarity. Output third-order intercept point reaches 13.1 dBm and total harmonic distortion is below 40 dB at 0.9 -di output. The continuous time filter is implemented in a 0.18-m SiGe process, it occupies 0.17 mm 2 on a 3.2 3.7 mm 2 test chip and consumes 0.3 W from a 3.3-V supply.Index Terms-Active filter, antialiasing filter, continuous time filter (CTF), -filter, high-speed integrated circuit, optical fiber dispersion compensation.

show abstract

Section: Resultsmentioning

confidence: 90%

Section: Resultsmentioning

confidence: 90%

A 1.6–3.2-GHz Sixth-Order ${+}$13.1-dBm OIP3 Linear Phase ${ g}_{ m}$-$C$ Filter for Fiber-Optic EDC Receivers

Baranauskas

Zelenin

Bussmann³

et al. 2010

IEEE Trans. Microwave Theory Techn.

View full text Add to dashboard Cite

show abstract

“…However, very few lowpass filter implementations above 4 GHz are reported in the literature, and none of them are based on closed-loop architectures. In [11], a tunable 5 th order elliptic Gm-C lowpass filter in 170 GHz-f T SiGe BiCMOS with a maximum bandwidth of 4.1 GHz was reported, and in [12] a 3 rd order Gm-C filter with a maximum bandwidth of 10 GHz, in 65-nm CMOS was reported. Filters based on the active inductance approach have been presented in [13], that reports a 5 th order 4.57-GHz lowpass filter in 180-nm CMOS, and [14] that describes a 10.5-GHz biquad in SiGe HBT technology.…”

Section: Introductionmentioning

confidence: 99%

10-GHz Fully Differential Sallen–Key Lowpass Biquad Filters in 55nm SiGe BiCMOS Technology

et al. 2020

View full text Add to dashboard Cite

Multi-GHz lowpass filters are key components for many RF applications and are required for the implementation of integrated high-speed analog-to-digital and digital-to-analog converters and optical communication systems. In the last two decades, integrated filters in the Multi-GHz range have been implemented using III-V or SiGe technologies. In all cases in which the size of passive components is a concern, inductorless designs are preferred. Furthermore, due to the recent development of high-speed and high-resolution data converters, highly linear multi-GHz filters are required more and more. Classical open loop topologies are not able to achieve high linearity, and closed loop filters are preferred in all applications where linearity is a key requirement. In this work, we present a fully differential BiCMOS implementation of the classical Sallen Key filter, which is able to operate up to about 10 GHz by exploiting both the bipolar and MOS transistors of a commercial 55-nm BiCMOS technology. The layout of the biquad filter has been implemented, and the results of post-layout simulations are reported. The biquad stage exhibits excellent SFDR (64 dB) and dynamic range (about 50 dB) due to the closed loop operation, and good power efficiency (0.94 pW/Hz/pole) with respect to comparable active inductorless lowpass filters reported in the literature. Moreover, unlike other filters, it exploits the different active devices offered by commercial SiGe BiCMOS technologies. Parametric and Monte Carlo simulations are also included to assess the robustness of the proposed biquad filter against PVT and mismatch variations.

show abstract

“…For these reasons, several active filters have been proposed in the literature, lowpass [5][6][7][8][9][10][11][12][13] and bandpass 14 , at frequencies larger than 1 GHz. They employ no inductors, to save area, and synthetize complex poles by means of active circuits.…”

mentioning

confidence: 99%

“…They employ no inductors, to save area, and synthetize complex poles by means of active circuits. Typically, they use the Gm-C topology 6,[9][10][11] , or emulate the inductor via other active circuits 5,7,8,14 . Other possibilities are the Sallen-Key 12 and Tow-Thomas 13 topologies.…”

mentioning

confidence: 99%

A 10 GHz inductorless active SiGe HBT lowpass filter

Centurelli

Monsurrò

Trifiletti

2018

Int J RF Microw Comput Aided Eng

View full text Add to dashboard Cite

High‐frequency (around 10 GHz) filters are necessary for many applications, in anti‐aliasing filters for high‐speed data converters or optical communications. Modern SiGe technology allows implementing radio‐frequency circuits up to about 100 GHz. At the lower frequencies around 10 GHz, the size of passive components is a concern, and inductorless designs are used. We present a topology for an inductorless lowpass biquad filter capable of operating at 10 GHz or more in the STMicroelectronics BiCMOS55 process. The filter is simulated considering temperature, process, biasing and mismatch variations, tested with parametric and Monte Carlo simulations. The layout of the biquad filter has been implemented, and the results of post‐layout simulations are reported. The biquad stage has good dynamic range (45 dB) and power efficiency (0.65 pW/Hz/pole) with respect to comparable active lowpass filters reported in the literature, and, unlike other filters, only uses NPN devices, which are the only high‐speed devices available in many Hybrid Bipolar Transistor (HBT) technologies.

show abstract

A 70 MHz - 4.1 GHz 5th-Order Elliptic gm-C Low-Pass Filter in Complementary SiGe Technology

Cited by 11 publications

References 0 publications

A 1.6–3.2-GHz Sixth-Order ${+}$13.1-dBm OIP3 Linear Phase ${ g}_{ m}$-$C$ Filter for Fiber-Optic EDC Receivers

A 1.6–3.2-GHz Sixth-Order ${+}$13.1-dBm OIP3 Linear Phase ${ g}_{ m}$-$C$ Filter for Fiber-Optic EDC Receivers

10-GHz Fully Differential Sallen–Key Lowpass Biquad Filters in 55nm SiGe BiCMOS Technology

A 10 GHz inductorless active SiGe HBT lowpass filter

Contact Info

Product

Resources

About