A 71–86-GHz Phased Array Transceiver Using Wideband Injection-Locked Oscillator Phase Shifters

Ebrahimi, Najme; Wu, Po-Yi; Bagheri, Mahdi; Buckwalter, James F.

doi:10.1109/tmtt.2016.2647703

Cited by 50 publications

(10 citation statements)

References 31 publications

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“…As reverse isolation decreases, i.e., reverse gain (S 12 ) increases, MAG is lowered in Equation (1). The stability factor in Equation (2) also decreases with larger S 12 .…”

Section: Conventional and Proposed Neutralization Techniquesmentioning

confidence: 98%

“…Over the last years, wireless communication technology based on the CMOS process was widely developed in the W-band frequencies. Wireless point-to-point links at 71-76 GHz and 81-86 GHz enable high-speed communication with a data rate of tens of Gbps [1]. In addition to wireless communication, there are several significant W-band applications, such as 77-GHz automotive radar for collision avoidance [2] and 94-GHz imaging for surveillance, security, and medical purposes [3,4].…”

Section: Introductionmentioning

confidence: 99%

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A CMOS W-Band Amplifier with Tunable Neutralization Using a Cross-Coupled MOS–varactor Pair

Yook

Park

et al. 2019

Electronics

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This paper presents a CMOS W-band amplifier adopting a novel neutralization technique for high gain and stability. The W-band amplifier consists of four common-source differential gain cells that are neutralized by a cross-coupled MOS–varactor pair. Contrary to conventional neutralizations, the proposed technique enables tunable neutralization, so that the gate-to-drain capacitance of transistors is accurately tracked and neutralized as the varactor voltage is adjusted. This makes the neutralization tolerant of capacitance change caused by process–voltage–temperature (PVT) variation or transistor model inaccuracy, which commonly occurs at mm-wave frequencies. The proposed tunable neutralization is experimentally confirmed by measuring gain and stability of the W-band amplifier fabricated in a 65-nm CMOS process. The amplifier achieves a measured gain of 17.5 dB at 79 GHz and a 3-dB bandwidth from 77.5 to 84 GHz without any stability issue. The DC power consumption is 56.7 mW and the chip area is 0.85 mm2.

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“…As reverse isolation decreases, i.e., reverse gain (S 12 ) increases, MAG is lowered in Equation (1). The stability factor in Equation (2) also decreases with larger S 12 .…”

Section: Conventional and Proposed Neutralization Techniquesmentioning

confidence: 98%

Section: Introductionmentioning

confidence: 99%

A CMOS W-Band Amplifier with Tunable Neutralization Using a Cross-Coupled MOS–varactor Pair

Yook

Park

et al. 2019

Electronics

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“…However, while transistors reach working frequencies ( ) / *+, ) higher than 400 GHz in BiCMOS technologies to address mm-wave applications [1], the variety of passive tunable elements in these technologies is limited to a few types of varactors or switched inductors. Tunable elements are required, either for performing necessary RF functions, such as tuning of VCOs [2], phase-shift control, in particular to build beam-steering systems allowing to compensate the increase of path-loss in free space [3], calibration purposes, [4] etc. The performance of tunable devices is quantified in terms of tuning range and quality factor M. Margalef-Rovira and M. J. Barragan are with TIMA, CNRS, Grenoble INP, Université Grenoble Alpes, 38000 Grenoble, France (e-mail: marc.margalef-rovira@univ-grenoble-alpes.fr; manuel.barragan@univgrenoble-alpes.fr).…”

Section: Introductionmentioning

confidence: 99%

Highly Tunable High-Q Inversion-Mode MOS Varactor in the 1–325-GHz Band

Margalef‐Rovira

Saadi

Vincent

et al. 2020

IEEE Trans. Electron Devices

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HAL is a multidisciplinary open access archive for the deposit and dissemination of scientific research documents, whether they are published or not. The documents may come from teaching and research institutions in France or abroad, or from public or private research centers. L'archive ouverte pluridisciplinaire HAL, est destinée au dépôt et à la diffusion de documents scientifiques de niveau recherche, publiés ou non, émanant des établissements d'enseignement et de recherche français ou étrangers, des laboratoires publics ou privés. Distributed under a Creative Commons Attribution-NonCommercial| 4.0 International License

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“…In recent decades, silicon-based technology makes it possible to realise complex phased array systems at a much higher level of integration and reliability, and ease implementing digital tuning and calibration techniques in integrated systems to improve the overall functionality and flexibility of the whole system. Phased array systems or subsystems implemented with silicon-based integrated circuits (ICs), suited for high data rate directional wireless communication or short-range radar applications, such as collision avoidance and assisted parking in automobiles, have already been extensively reported [3,[7][8][9][10].…”

Section: Introductionmentioning

confidence: 99%

Robustness‐oriented P‐band phased array radar front‐end with high phase and gain resolution in 0.18 BiCMOS

Yun

et al. 2020

IET Microwaves, Antennas & Propagation

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In this study, the authors present a P‐band phased array front‐end for radar applications, implemented using a 0.18 μm SiGe BiCMOS process, thereby enhancing robustness over process‐voltage‐temperature (PVT) variations. It comprises a low noise amplifier, 6‐bit attenuator, 6‐bit phase shifter, power amplifier, T‐R switches as well as control circuits. As the key here is to achieve high resolutions in both gain and phase controls, the 6‐bit attenuator and 6‐bit phase shifter are optimised by cascading unit cells with different topologies, hence ensuring a good balance between accuracy, silicon area and robustness. Temperature compensation techniques are also used in the low noise amplifier and power amplifier so that the circuit works robustly against PVT variations. Fabricated using TowerJazz 0.18 μm SiGe BiCMOS technology, the prototype front‐end occupies a chip area of 5×2.5thinmathspacenormalmm2, including bonding pads and test buffers. It performs with a receiver (RX) gain of 12 dB, a 3 dB noise figure, and a transmitter (TX) gain of 29 dB, while consuming 60 mW (RX mode) and 600 mW (TX mode) from a 3.3 V supply voltage. The chip is also measured in extreme conditions (e.g. temperatures exceeding 100°C) to ensure robust operation and is suitable for low‐cost phased array systems.

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A 71–86-GHz Phased Array Transceiver Using Wideband Injection-Locked Oscillator Phase Shifters

Cited by 50 publications

References 31 publications

A CMOS W-Band Amplifier with Tunable Neutralization Using a Cross-Coupled MOS–varactor Pair

A CMOS W-Band Amplifier with Tunable Neutralization Using a Cross-Coupled MOS–varactor Pair

Highly Tunable High-Q Inversion-Mode MOS Varactor in the 1–325-GHz Band

Robustness‐oriented P‐band phased array radar front‐end with high phase and gain resolution in 0.18 BiCMOS

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