A 77-dB-DR 0.65-mW 20-MHz 5th-Order Coupled Source Followers Based Low-Pass Filter

Xu, Yang; Hu, Hang; Muhlestein, Jason; Moon, Un-Ku

doi:10.1109/jssc.2020.3006790

Cited by 18 publications

(15 citation statements)

References 11 publications

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“…Different VM biquadratic architectures taking advantage of source followers are proposed in previous studies. [6][7][8][9] Especially, super source follower-based filter structure with differential implementation shows remarkable performance in De Matteis et al 8 However, basic operations like addition, subtraction, or multiplication are easier to perform using currents instead of voltages. Besides, CM functions exhibit higher frequency potential making use of simpler architectures.…”

Section: Introductionmentioning

confidence: 99%

“…Another attempt to approach high transconductance values with acceptable linearity is to use MOS transistors as transconductors. [6][7][8][9][24][25][26][27] Also, intrinsic C gs capacitances of them give rise to MOS-only designs. [28][29][30][31][32][33][34] Even though they bring low power consumption with small chip area, nonlinear intrinsic capacitances of the MOS devices deteriorate adjustability of the filter structure.…”

Section: Introductionmentioning

confidence: 99%

“…The filter structure is very suitable for wireless communications, but it consumes high power to reach a wide range of tunability of filter gain. Different VM biquadratic architectures taking advantage of source followers are proposed in previous studies 6–9 . Especially, super source follower‐based filter structure with differential implementation shows remarkable performance in De Matteis et al 8 However, basic operations like addition, subtraction, or multiplication are easier to perform using currents instead of voltages.…”

Section: Introductionmentioning

confidence: 99%

“…In this respect, center frequency of the filters employing active elements goes up at the expense of huge power dissipation. Another attempt to approach high transconductance values with acceptable linearity is to use MOS transistors as transconductors 6–9,24–27 . Also, intrinsic C gs capacitances of them give rise to MOS‐only designs 28–34 .…”

Section: Introductionmentioning

confidence: 99%

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A current‐mode MOSFET‐C analog filter for the high‐frequency band applications

Ozenli

Yeşil

Kuntman

2021

Circuit Theory & Apps

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Summary In this work, a novel current‐mode filter is presented including a PMOS grounded capacitor and a metal insulator metal structure (MIM‐cap). Proposed filter's cut‐off frequency can be easily adjusted from 10 up to 35 MHz. The wide tuning range of the proposed filter is designed to cover the need of baseband filter in the high‐frequency band and wireless applications such as CDMA, IEEE802.11a/g, IEEE 802.11b, and IEEE 802.11n. In addition, the proposed filter is designed by using a design methodology employing polynomial regressive models of small signal parameters of transistors to provide design accuracy as high as possible. Designed filter structure has layout with 52.1 μm × 62.6 μm chip area, and post‐layout simulations are given extensively to prove performance of the filter. Furthermore, 1‐dB compression point and IIP3 analyses are highlighted to observe linearity of band‐pass output of the filter structure. Also, input‐referred noise characteristics of the filter outputs are investigated to overcome thermal noise effects worsening the performance for a wide range of operating frequency interval. Provided results show that the proposed filter scheme brings a promising opportunity to designers for the high‐frequency region operations.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

A current‐mode MOSFET‐C analog filter for the high‐frequency band applications

Ozenli

Yeşil

Kuntman

2021

Circuit Theory & Apps

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“…The requirement for filter design emphasizes low power consumption, high dynamic range (wide linear range with low noise) and small chip area. Source follower (SF) is one of an analog filter scheme which provides the aforementioned specifications from its compact structure, especially SF with high frequency (HF) application [1]- [5] In this paper, a source follower with bulk neutralization (SFB) filter with body effect cancellation [6] which targeted for biomedical application is redesigned for high frequency signal filtering. The structure of this paper is organized as follows.…”

Section: Introductionmentioning

confidence: 99%

A 20-MHz 0.323-mW 23.9-dBm-IIP3 4^th-order Current-Reuse Lowpass Filter

Thanapitak

Chulajata

Sedtheetorn

et al. 2021

2021 18th International Conference on Electrical Engineering/Electronics, Computer, Telecommunications and Information Technolo

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A source follower lowpass filter which has a capability of bulk-attenuation cancellation in higher order is presented. Under strong inversion bias arrangement for high frequency application, this fourth-order-filter is simulated in a 0.18 µm standard CMOS process and exhibits a 20 MHz bandwidth with total power consumption of 0.323 mW from 1.8 V supply. Third order intermodulation distortion verification with 1.9 and 2.1 MHz signal archives 23.9 dBm IIP3 with 75.5 dB dynamic range. By using figure-of-merit as a benchmark indicator, the proposed filter is one of the top in its class with the lowest power consumption.

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Analysis of super‐source‐follower‐based GHz‐bandwidth biquadratic low‐pass filters

Chen,

Yen,

Lin

et al. 2024

Circuit Theory & Apps

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SummaryThe design of GHz‐bandwidth super‐source‐follower‐based low‐pass filters (SSF‐LPFs) is investigated. The transfer function is derived by considering transistor parasitics. The behaviors of SSF‐LPFs can be predicted accurately with these formulas. The theoretical values of pole/zero frequencies of the circuit agree well with the corresponding simulation results. Moreover, the relationship between the Q factor and the phase margin of the biquadratic filter is revealed. Two 1.3‐GHz 4th‐order LPFs are designed using 90‐nm CMOS technology, where one contains a high‐Q biquad with a small phase margin and a low‐Q biquad, while the other is built with two biquads with moderate Q factors and sufficient phase margins. For the former, the discrepancy between the theoretical and simulated phase margin is <2°, and the discrepancy between the theoretical and simulated corner frequency is <6%. For the latter, the discrepancy between the theoretical and simulated phase margin is <4°, and the discrepancy between the theoretical and simulated corner frequency is <4%. The filter containing biquads with sufficient phase margins is fabricated and occupies an area of 0.44 mm2. Consuming 14.4 mW, the filter delivers a bandwidth of 1.3 GHz, P1dB of −11.94 dBm, and IIP3 of −4.5 dBm.

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A 77-dB-DR 0.65-mW 20-MHz 5th-Order Coupled Source Followers Based Low-Pass Filter

Cited by 18 publications

References 11 publications

A current‐mode MOSFET‐C analog filter for the high‐frequency band applications

A current‐mode MOSFET‐C analog filter for the high‐frequency band applications

A 20-MHz 0.323-mW 23.9-dBm-IIP3 4^th-order Current-Reuse Lowpass Filter

Analysis of super‐source‐follower‐based GHz‐bandwidth biquadratic low‐pass filters

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A 77-dB-DR 0.65-mW 20-MHz 5th-Order Coupled Source Followers Based Low-Pass Filter

Cited by 18 publications

References 11 publications

A current‐mode MOSFET‐C analog filter for the high‐frequency band applications

A current‐mode MOSFET‐C analog filter for the high‐frequency band applications

A 20-MHz 0.323-mW 23.9-dBm-IIP3 4th-order Current-Reuse Lowpass Filter

Analysis of super‐source‐follower‐based GHz‐bandwidth biquadratic low‐pass filters

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A 20-MHz 0.323-mW 23.9-dBm-IIP3 4^th-order Current-Reuse Lowpass Filter