A low‐power and wideband two‐stage millimeter‐wave low‐noise amplifier (LNA) for 60 GHz wireless personal area network system and 77 GHz automotive radar system using standard 90 nm CMOS technology is reported. T‐match technique is used to achieve simultaneously wideband input and output impedance matching, wideband power gain (S21), and wideband noise figure (NF). The LNA consumes 9.99 mW, achieving S11 better than −−10 dB for frequencies of 57.6–81.8 GHz, and S12 better than −−29.1 dB for frequencies of 10–110 GHz. Additionally, high and flat S21 of 11.2 ± 1.5 dB is achieved for frequencies of 57.9–80.4 GHz, which means the corresponding 3‐dB bandwidth is 22.5 GHz. Furthermore, the LNA achieves minimum NF of 4.8 dB at 76 GHz and NF of 6.2 ± 1.4 dB for frequencies of 76–84 GHz, one of the best NF results ever reported for a CMOS or SiGe BiCMOS LNA with operation frequency around 77 GHz. © 2015 Wiley Periodicals, Inc. Microwave Opt Technol Lett 57:594–600, 2015