A 850/900/1800/1900MHz Quad-Band CMOS Medium Power Amplifier

Abstract

This paper presents a two-stage quad-band CMOS RF power amplifier. The power amplifier is fabricated in a 0.25 μm CMOS process. The measured 1-dB compression point between 800 and 900 MHz is 15 dBm ± 0.2 dB with maximum 18% PAE, and between 1800 and 1900MHz is 17.5dBm ± 0.7dB with maximum 17% PAE. The measured gains in the two bands are 23.6 dB ± 0.7 dB and 13 dB ± 2.1 dB, respectively.