A 9.1–10.7 GHz 10-W, 40-dB Gain Four-Stage PHEMT MMIC Power Amplifier

Chu, Chia‐Chi; Huang, Haikun; Liu, Hongzhi; Lin, Che-Hung; Chang, Christophe; Wu, Chang-Luen; Chang, Chian-Sern; Wang, Yeong-Her

doi:10.1109/lmwc.2006.890346

Cited by 22 publications

(3 citation statements)

References 10 publications

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“…In particular, the GaAs and GaN III-V technologies have been the subject of considerable efforts. In [1]- [3], very high output power, up to 10 W at X-band, was obtained using GaAs. However, the III-V technologies result in large chip size and high cost.…”

Section: Introductionmentioning

confidence: 99%

Quadruple-Differentially-Driven Offset-Probe- Fed Patch Antenna for On-Antenna Power Combining

Gall,

Ghiotto,

Varault

et al. 2024

IEEE Access

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In this paper, a novel quadruple differentially driven offset probe fed patch antenna is introduced to extend the on-antenna power combining (OAPC) capabilities. This original design is based on the feeding of the two fundamental resonating modes of a square patch using offset differential probe pairs. Polarization diversity is obtained changing the relative phase difference between the differential driving signals. Using two orthogonally arranged offset differential pairs (each driving one of the two resonating modes), a four-port driven patch antenna (4DPA) is achieved. Then, mirror-duplicating the 4DPA feeding differential pairs (i.e., each resonating mode being then driven by two offset differential pairs), an eight-port driven patch antenna (8DPA) is obtained. For those structures, the offset probe pair common mode (CM) parasitic effect is studied. Then, mitigating technics based on the CM impedance control are introduced. One of them is implemented in 4DPA and 8DPA demonstrators using unbalanced commercial power amplifiers. Combining power directly into the antenna with up to eight ports in this work, improved efficiency, higher transmitted power, smaller associated monolithic microwave integrated circuits (MMIC) and enhanced heat dissipation are achieved compared to the alternative on-circuit power combining technics. As a proof of concept and to compare performance, passive and active demonstrators of reference one-port driven patch antennas (1DPA), 4DPAs and 8DPAs operating at 2.45 GHz are designed, fabricated and measured. The simulation and experimental results validate the proposed on-antenna combining technic, which is believed by the authors to be of particular interest to enhance performance of radar and communication silicon-based active antenna arrays.INDEX TERMS Differentially-driven antennas, multi-port antennas, on-antenna power combining, patch antennas.

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Section: Introductionmentioning

confidence: 99%

Quadruple-Differentially-Driven Offset-Probe- Fed Patch Antenna for On-Antenna Power Combining

Gall,

Ghiotto,

Varault

et al. 2024

IEEE Access

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“…Recently, several HPAs have been fabricated on different substrates such as silicon [1,2], GaAs [3][4][5][6][7][8][9][10][11][12][13][14] and GaN [15][16][17][18]. GaN technologies have superior performance in power applications due to high breakdown voltage of the transistors, which results in high output power density.…”

Section: Introductionmentioning

confidence: 99%

“…A number of GaAs HPAs have been reported in the X and Ku frequency bands. For instance, 8-10 W HPAs are reported in [4][5][6][7][10][11][12][13]; however, all of the HPAs are narrowband designs. Hek has introduced a wideband PA in pulse mode regime [9], however the performance is degraded in continuous-wave (CW) mode.…”

Section: Introductionmentioning

confidence: 99%

Highly reliable 10‐W X/Ku‐band pHEMT monolithic microwave integrated circuit power amplifier

Frounchi

Mohammadi

Medi

2016

IET Microwaves, Antennas & Propagation

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In this study, a reliable 10 W high‐power amplifier (HPA) is presented along with its design procedure. Implemented on a 0.25‐μm InGaAs/AlGaAs/GaAs pseudomorphic high electron mobility transistor (pHEMT) process, the designed HPA achieves power added efficiency (PAE) of more than 33% across the 7.8–12.8 GHz band. The proposed two‐stage PA provides 15 dB large signal gain with an average small‐signal gain of 18 dB. Peak results are achieved at 12.2 GHz with 40.8 dBm output power and 44% PAE. The reliability of the designed HPA is studied in detail along with a thorough discussion of related concerns.

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X‐band high‐power amplifier with a magnetically coupled power‐combiner

Lee

Park

Chun

et al. 2009

Micro & Optical Tech Letters

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In this article, a high-power amplifier for X-band application is studied, which consists of a two-stage amplifier with magnetically coupled power-combiners and dividers. These are based on transmission line transformers, which has lower loss characteristics than spiral-type transformers at the frequencies. The proposed amplifier utilizes the voltage-combining concept with the transformers and differential amplifiers. The size of the amplifier is also minimized by using the virtual grounds of the differential structure. The saturated output power of the power amplifier is 38.1 dBm (6.45 W), and the gain is 17 dB at 10 GHz. The area of the chip is 2.56 mm Â 3.13 mm and the power density of the amplifier is 806 mW/mm 2 .ABSTRACT: This article presents the design and radiation characteristics of a dual-mode corrugated matched feed horn. This type of feed eliminates the unwanted high cross-polarization of an offset parabolic reflector antenna and improves the overall performance of the antenna sub-system. In a cylindrical corrugated structure, higher order HE 21 mode is added with the fundamental HE 11 mode to configure a dual-mode corrugated horn. For the proposed horn, the return-loss characteristics and the far-field radiation patterns were measured and the results are compared with the simulated results. The horn has been used as a primary feed device to illuminate a linearly polarized offset parabolic reflector antenna and the improvement in the crosspolarization has been estimated. Figure 1 Simulated secondary radiation pattern of an offset reflector illuminated by a conventional (HE 11 mode guided) corrugated horn. (For F/D ¼ 0.82, h 0 ¼ 34.8 )

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A 9.1–10.7 GHz 10-W, 40-dB Gain Four-Stage PHEMT MMIC Power Amplifier

Cited by 22 publications

References 10 publications

Quadruple-Differentially-Driven Offset-Probe- Fed Patch Antenna for On-Antenna Power Combining

Quadruple-Differentially-Driven Offset-Probe- Fed Patch Antenna for On-Antenna Power Combining

Highly reliable 10‐W X/Ku‐band pHEMT monolithic microwave integrated circuit power amplifier

X‐band high‐power amplifier with a magnetically coupled power‐combiner

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