A 9-50-GHz Gilbert-cell down-conversion mixer in 0.13-/spl mu/m CMOS technology

Lin, Chih‐Hsun; Wu, Pei-Si; Chang, Hong-Yeh; Wang, H.

doi:10.1109/lmwc.2006.873492

Cited by 97 publications

(42 citation statements)

References 20 publications

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“…To have a more flat curve of the CG in the band of interest, the area hungry inductors can be implemented for compensating the parasitic capacitances of the transistors. The topology of the designed mixer is shown in Figure 4a, which has been already realized by 10 in 0.13-µm CMOS technology. For the power consumption of the mixer we calculated 10.4 mW.…”

Section: Concept For Spin Wave On-chip Detectionmentioning

confidence: 99%

Design of a CMOS integrated on-chip oscilloscope for spin wave characterization

et al. 2017

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Spin waves can perform some optically-inspired computing algorithms, e.g. the Fourier transform, directly than it is done with the CMOS logic. This article describes a new approach for on-chip characterization of spin wave based devices. The readout circuitry for the spin waves is simulated with 65-nm CMOS technology models. Commonly used circuits for Radio Frequency (RF) receivers are implemented to detect a sinusoidal ultra-wideband (5-50 GHz) signal with an amplitude of at least 15 μV picked up by a loop antenna. First, the RF signal is amplified by a Low Noise Amplifier (LNA). Then, it is down-converted by a mixer to Intermediate Frequency (IF). Finally, an Operational Amplifier (OpAmp) brings the IF signal to higher voltages (50-300 mV). The estimated power consumption and the required area of the readout circuit is approximately 55.5 mW and 0.168 mm2, respectively. The proposed On-Chip Oscilloscope (OCO) is highly suitable for on-chip spin wave characterization regarding the frequency, amplitude change and phase information. It offers an integrated low power alternative to current spin wave detecting systems.

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Section: Concept For Spin Wave On-chip Detectionmentioning

confidence: 99%

Design of a CMOS integrated on-chip oscilloscope for spin wave characterization

et al. 2017

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“…Another primary limitation of the bandwidth of a mixer is the passive comments [122][123][124] in the input or output port of a mixer especially for the case of an active mixer utilizing with the Gilbert-cell [125][126][127] in CMOS technologies. Therefore, the passive components should be designed as broadband as possible for achieving wideband performance.…”

Section: Mixermentioning

confidence: 99%

Advances in Silicon Based Millimeter-Wave Monolithic Integrated Circuits

et al. 2014

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Abstract:In this paper, the advances of the silicon-based millimeter-wave (MMW) monolithic integrated circuits (MMICs) are reported. The silicon-based technologies for MMW MMICs are briefly introduced. In addition, the current status of the MMW MMICs is surveyed and novel circuit topologies are summarized. Some representative MMW MMICs are illustrated as design examples in the categories of their functions in a MMW system. Finally, there is a conclusion and description of the future trend of the development of the MMW ICs.

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“…Recently, ladder networks [2], [3] and transformers [4], [5] have been employed at the input ports of the mixer. These circuits are interested in nonuniform conversion gain over the input frequency range.…”

Section: Introductionmentioning

confidence: 99%