2007
DOI: 10.1109/jssc.2006.889374
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A 90-nm Wideband Merged CMOS LNA and Mixer Exploiting Noise Cancellation

Abstract: This paper describes the design and implementation of a wideband merged LNA and mixer chip covering the frequency range from 0.1 to 3.85 GHz using 90-nm CMOS technology. Its high level of integration as well as its low power consumption makes it suitable for the rapidly growing software defined radio RF receivers. The chip performance achieves S11 below 10 dB along the entire band and a minimum single side band noise figure of 8.4 dB at IF frequency of 70 MHz. Power conversion gain is measured to be 12.1 dB wh… Show more

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Cited by 72 publications
(46 citation statements)
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“…2 (d) illustrates the input reflection coefficient, S11 parameter, which is below −10 dB at the desired range of frequency. Table I summarizes the most important performance parameters of the proposed technique with and without added inductors and their comparison with designs reported in previous literatures [5,6,7]. This table obviously illustrates the proposed technique offers better NF, gain and bandwidth with lower power consumption.…”
Section: Simulation Resultsmentioning
confidence: 82%
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“…2 (d) illustrates the input reflection coefficient, S11 parameter, which is below −10 dB at the desired range of frequency. Table I summarizes the most important performance parameters of the proposed technique with and without added inductors and their comparison with designs reported in previous literatures [5,6,7]. This table obviously illustrates the proposed technique offers better NF, gain and bandwidth with lower power consumption.…”
Section: Simulation Resultsmentioning
confidence: 82%
“…Also folded cascode structure is used to facilitate integration of RF transceiver in low voltage operation. A similar implementation targeting noise cancellation has been presented in [7] without focusing on parasitic capacitance effect, which is highlighted in this letter.…”
Section: Circuit Descriptionmentioning
confidence: 99%
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