A 900 MHz HBT power amplifier MMICs with 55% efficiency, at 3.3 V operation

Asano, Hiroaki; Hara, Shinji; Komai, S.

doi:10.1109/mwsym.1998.689357

Cited by 11 publications

(4 citation statements)

References 6 publications

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“…This amplifier shows the best PAE for wattlevel CMOS PAs published thus far [1], [6]- [8] (see Table I). It demonstrates that the power and efficiency of a CMOS PA are comparable to those of GaAs HBT-based PAs [2].…”

Section: Measurement Resultsmentioning

confidence: 86%

“…, at each output of the power transistor [3], as shown in (2) (3) However, with the parasitic inductance and capacitance of the transformer, and additional shunt capacitors, the load impedance of each power transistor can be tailored. The length and width of the transformer in addition to the shunt capacitance were determined in order to generate the desired output power.…”

Section: Transmission Line Transformermentioning

confidence: 99%

“…To overcome the lossy characteristics of a silicon substrate, which is the main reason for the degradation of efficiency in PAs, a transmission line transformer (TLT) on a printed circuit board (PCB) is used as an output power combiner and a matching circuit. This study demonstrates the performance limit of a CMOS PA as compared to GaAs PAs [2]. Additionally, driver circuits with cascaded class-D amplifiers are proposed to drive a power stage effectively while operating as class-E. Voltage combining scheme using a transmission line transformer as an output power combiner and a matching circuit to follow [1].…”

Section: Introductionmentioning

confidence: 96%

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A CMOS RF Power Amplifier Using an Off-Chip Transmision Line Transformer With 62% PAE

Jang¹,

Park²,

Kim

et al. 2007

IEEE Microw. Wireless Compon. Lett.

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In this letter, a two-stage 900-MHz CMOS differential power amplifier (PA) is designed and implemented in a 0.18-m radio frequency CMOS process. A transmission line transformer on a printed circuit board is used as an output power combiner and matching circuits of a class-E power stage. To drive the power stage effectively, cascaded class-D amplifiers are used as driver amplifiers. The PA delivers an output power of 31.7 dBm and a power-added efficiency of 62.4% with a power gain of 30.3 dB, including the losses of the bond-wires and the output transformer.

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Section: Measurement Resultsmentioning

confidence: 86%

Section: Transmission Line Transformermentioning

confidence: 99%

Section: Introductionmentioning

confidence: 96%

See 1 more Smart Citation

A CMOS RF Power Amplifier Using an Off-Chip Transmision Line Transformer With 62% PAE

Jang¹,

Park²,

Kim

et al. 2007

IEEE Microw. Wireless Compon. Lett.

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“…LDMOS (laterally diffused metal-oxide semiconductor) [4]- [6], HBT (Hetero-junction bipolar transistor) [7], [8], and GaAs MESFET (gallium arsenide metalsemiconductor field effect transistor) [9] were considered as the device of GSM. LDMOS and HBT do not require a negative bias voltage, and therefore these devices were widely applied for GSM.…”

Section: Requirements For Mobile Phone Pasmentioning

confidence: 99%

Evolution of Power Amplifiers for Mobile Phone Terminals from the 2nd Generation to the 5th Generation

Tanaka

Mukai

Imai

et al. 2022

IEICE Trans. Electron.

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Mobile phone systems continue to evolve from the 2nd generation, which began in the early 1990s, to the 5th generation, which is now in service. Along with this evolution, the power amplifier (PA) is also evolved. The characteristics required for PA are changing with each generation. In this paper, we will give an overview of the evolution of PAs from the 2nd generation mobile phones such as GSM (global system for mobile communications) to the 5th generation mobile phones that is often called NR (new radio), in particular, the circuit system. Specifically, the following five items will be described. (1) Ramp-up and ramp-down power control circuit corresponding to GSM, (2) Self-bias circuit technology for improving linearity that becomes important after W-CDMA (wideband code division multiple access), (3) Power mode switching methods for improving efficiency at low output power, (4) Power combining methods that have become important since LTE (long term evolution), and (5) Backoff efficiency improvement methods represented by ET (envelop tracking) and Doherty PA.

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