A 90nm CMOS integrated Nano-Photonics technology for 25Gbps WDM optical communications applications

Waveguide-coupled detector in zero-change complementary metal–oxide–semiconductor

“…For example, even if optical detection can be achieved by midband gap absorption in doped or poly-crystalline silicon waveguides or by internal photoemission absorption in Schottky junctions, 2,3 the most typical approach consists of incorporating pure germanium on silicon. [4][5][6] As a consequence, a complete toolbox has so far been demonstrated only in modified CMOS flows 4,5 and rely on the 90 nm or older nodes, which are no longer utilized for building HPC microprocessors. 7 The modification of existing nodes, moreover, requires costly process development and challenges fabrication yield.…”

Experimental demonstration of titanium nitride plasmonic interconnects

“…Integrated optical technologies offer unprecedented bandwidth, propagation loss, and noise reduction -advantages that are harnessed in current telecommunication networks and a limited number of commercial devices [1][2][3]. However, a limiting factor which has prevented ubiquitous adoption of integrated optical components is the restriction on the minimum size of components due to the diffraction limited nature of light.…”

Localized fields, global impact: Industrial applications of resonant plasmonic materials

“…In 2012, IBM announced a technology breakthrough with monolithic integration of optical modulators, photodetectors, and multiplexers into a 90-nm-base high-performance computing chip. 67 However, integration of electronics and photonics requires further miniaturization of optical components, effi cient electrical or optical tuning of light propagation, dynamic access to light sources, and isolation of optical signals analogous to that in electronics. 68 One possible integrated optoelectronic circuit design is illustrated in Figure 5 a, including an artist's depiction of nanophotonic sources, waveguides, modulators, diodes, fi lters, and photodetectors.…”