2011 Proceedings of the ESSCIRC (ESSCIRC) 2011
DOI: 10.1109/esscirc.2011.6044894
|View full text |Cite
|
Sign up to set email alerts
|

A 90nm CMOS UHF/UWB asymmetric transceiver for RFID readers

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1

Citation Types

0
2
0

Year Published

2013
2013
2018
2018

Publication Types

Select...
3
2

Relationship

1
4

Authors

Journals

citations
Cited by 8 publications
(2 citation statements)
references
References 9 publications
0
2
0
Order By: Relevance
“…The transceiver prototype has been fabricated in 90nm CMOS technology with 9 metal layers [23] . It occupies an area of 1800 μm × 900 μm with ESD protected pads.…”
Section: Measurement Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…The transceiver prototype has been fabricated in 90nm CMOS technology with 9 metal layers [23] . It occupies an area of 1800 μm × 900 μm with ESD protected pads.…”
Section: Measurement Resultsmentioning
confidence: 99%
“…In this work, a pulse-wave drain current LC oscillator is proposed as shown in Fig. 9 [23] . By the extra biasing circuit, DC voltage V bias of M1 and M2 is set to be lower than V dd in order to make the devices working in class C. From the simulation, it illustrates that drain current can be more close to a pulse wave by setting lower V bias .…”
Section: Digital Control Oscillatormentioning
confidence: 99%