A 94 GHz monolithic switch with a vertical PIN diode structure

Putnam, J.; Fukuda, M.; Staecker, P.; Yun, Yong‐Hoon

doi:10.1109/gaas.1994.636996

Cited by 22 publications

(5 citation statements)

References 4 publications

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“…In the case of silicon FETs, for example, it can handle high power at low frequency, but the performance drops off dramatically as frequency increases (Ota et al, 1995). In the case of GaAs metal-semiconductor fieldeffect transistors (MESFETs) (Ayali, 1982;Caverly, 1993;Gopinath and Rankin, 1985;Slobodnik et al, 1989) and PIN diodes (Alekseev and Pavlidis, 1998;Kobayashi et al, 1993;Putnam et al, 1994) the high-frequency operation is fairly well with small signal amplitudes. In short, when the signal frequency is greater than a few gigahertz these solidstate switches have large insertion loss (typically 1-2 dB) and poor isolation (~−20 to −25 dB).…”

Section: Switches For Rf and Microwave Applicationsmentioning

confidence: 99%

Micromachined Antennas

2002

RF MEMS and Their Applications

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Printed and bound in Great Britain by Biddles Ltd, Guildford and King's Lynn This book is printed on acid-free paper responsibly manufactured from sustainable forestry in which at least two trees are planted for each one used for paper production.xii PREFACE fabrication technologies can help realize high Q micromechanical filters for frequencies up to and beyond 10 MHz, and micromachined surface acoustic wave (SAW) filters filling the gap up to 2 GHz. Fabrication processes for all these devices and their relative advantages are taken up extensively in this book. In addition, a brief description of packaging approaches that may be extended for these devices is also included for the sake of comprehensiveness in coverage.We have endeavoured to present these topics so as to guide graduate students interested to do research in microfabrication techniques and their applications. It is therefore envisaged that parts of this books would form the curricula of electrical and mechanical engineering, applied physics or materials science departments. In addition, this would also serve as a reference book for practicing researchers in these areas for further widening the scope of their research.Materials for this book have been taken from an advanced level course offered at Pennsylvania State University recently on RF MEMS, and many short courses presented across the world. Valuable comments from the participants of these courses have helped in evolving the contents of this book and are greatly appreciated. In particular we also wish to thank many of our colleagues and students, Taeksoo Ji, Yanan Sha, Roopa Tellakula, Hargsoon Yoon, and Bei Zhu, at the Center for Electronic and Acoustic Materials and Devices for their contributions in preparing the manuscript for this book.We would like to thank Professors Vasundara V. Varadan and Richard McNitt for their support and encouragement. Our thanks are also due to our families, in particular Nisy John, for bearing with our preoccupation in preparing this manuscript. We are also indebted to various researchers for their valuable contributions cited in this book.We are also grateful to the publisher's staff for their support, encouragement and willingness to give prompt assistance during this book project.

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Section: Switches For Rf and Microwave Applicationsmentioning

confidence: 99%

Micromachined Antennas

2002

RF MEMS and Their Applications

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“…A low insertion loss of ∼3 dB and an isolation of ∼20 dB are the commonly desired features of such an SPDT switch. Since achieving high performance is the most critical parameter in most of the millimeter-wave systems, the SPDT switches implemented in these systems were also mostly implemented in III-V technologies [2]- [4]. But with the recent improvements in the silicon-based technologies, high performance millimeter-wave SPDT switch designs in CMOS [5]- [7] and SiGe BiCMOS technologies [8]- [10] have been reported in the literature which can compete with their III-V counterparts.…”

Section: Introductionmentioning

confidence: 99%

A D-band SPDT switch utilizing reverse-saturated SiGe HBTs for dicke-radiometers

Çetindoğan

Üstündağ

Turkmen

et al. 2018

2018 11th German Microwave Conference (GeMiC)

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Abstract-This paper presents a low insertion loss and high isolation D-band (110-170 GHz) single-pole double-throw (SPDT) switch utilizing reverse-saturated SiGe HBTs for Dickeradiometers. The SPDT switch design is based on the quarterwave shunt switch topology and implemented with further optimizations to improve the overall insertion loss and decrease the total chip size in a commercial 0.13-μm SiGe BiCMOS technology. Measurement results of the implemented SPDT switch show a minimum insertion loss of 2.6 dB at 125 GHz and a maximum isolation of 30 dB at 151 GHz while the measured input and output return loss is greater than 10 dB across 110-170 GHz. Total power consumption of the SPDT switch is 5.3 mW while draining 5.6 mA from a 0.95 V DC supply. Overall chip size is only 0.5×0.32 = 0.16 mm 2 , excluding the RF and DC pads.

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“…In addition, switches need high power-handling capabilities to support the large-signal output of power amplifiers (PAs). RF switches are typically implemented in CMOS [12], [15], [16] to minimize cost and power consumption, or in more expensive III-V technologies [13], [18], [19] when performance is essential. However, it has been shown that using SiGe heterojunction bipolar transistors (HBTs) in a novel reverse-saturated configuration can significantly improve millimeter-wave Si-based switches and approach the performance of III-V technologies [20].…”

Section: Introductionmentioning

confidence: 99%

On the Analysis and Design of Low-Loss Single-Pole Double-Throw W-Band Switches Utilizing Saturated SiGe HBTs

Schmid

Song

Coen

et al. 2014

IEEE Trans. Microwave Theory Techn.

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This paper describes the analysis and design of saturated silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) switches for millimeter-wave applications. A switch optimization procedure is developed based on detailed theoretical analysis and is then used to design multiple switch variants. The switches utilize IBM's 90-nm 9HP technology, which features SiGe HBTs with peak of 300/350 GHz. Using a reverse-saturated configuration, a single-pole double-throw switch with a measured insertion loss of 1.05 dB and isolation of 22 dB is achieved at 94 GHz after de-embedding pad losses. The switch draws 5.2 mA from a 1.1-V supply, limiting power consumption to less than 6 mW. The switching speed is analyzed and the simulated turn-on and turn-off times are found to be less than 200 ps. A technique is also introduced to significantly increase the power-handling capabilities of saturated SiGe switches up to an input-referred 1-dB compression point of 22 dBm. Finally, the impact of RF stress on this novel configuration is investigated and initial measurements over a 48-h period show little performance degradation. These results demonstrate that SiGe-based switches may provide significant benefits to millimeter-wave systems.Index Terms-Millimeter wave, 94 GHz, reverse saturation, saturation, silicon-germanium (SiGe) heterojunction bipolar transistor (HBT), single-pole double throw (SPDT), switch, transformer.

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A 94 GHz monolithic switch with a vertical PIN diode structure

Cited by 22 publications

References 4 publications

Micromachined Antennas

Micromachined Antennas

A D-band SPDT switch utilizing reverse-saturated SiGe HBTs for dicke-radiometers

On the Analysis and Design of Low-Loss Single-Pole Double-Throw W-Band Switches Utilizing Saturated SiGe HBTs

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